BCM847BV PDF даташит
Спецификация BCM847BV изготовлена «NXP Semiconductors» и имеет функцию, называемую «NPN/NPN matched double transistors». |
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Детали детали
Номер произв | BCM847BV |
Описание | NPN/NPN matched double transistors |
Производители | NXP Semiconductors |
логотип |
15 Pages
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BCM847BV; BCM847BS;
BCM847DS
NPN/NPN matched double transistors
Rev. 06 — 28 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
Table 1. Product overview
Type number Package
NXP
BCM847BV
SOT666
BCM847BS
SOT363
BCM847DS
SOT457
JEITA
-
SC-88
SC-74
PNP/PNP
complement
BCM857BV
BCM857BS
BCM857DS
Matched version of
BC847BV
BC847BS
-
1.2 Features
I Current gain matching
I Base-emitter voltage matching
I Drop-in replacement for standard double transistors
1.3 Applications
I Current mirror
I Differential amplifier
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO
IC
hFE
collector-emitter voltage
collector current
DC current gain
Conditions
open base
VCE = 5 V;
IC = 2 mA
Min Typ Max Unit
- - 45 V
- - 100 mA
200 290 450
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NXP Semiconductors
BCM847BV/BS/DS
NPN/NPN matched double transistors
Table 2. Quick reference data …continued
Symbol Parameter
Conditions
Per device
hFE1/hFE2 hFE matching
VBE1−VBE2 VBE matching
VCE = 5 V;
IC = 2 mA
VCE = 5 V;
IC = 2 mA
Min Typ Max Unit
[1] 0.9
1
-
[2] - - 2 mV
[1] The smaller of the two values is taken as the numerator.
[2] The smaller of the two values is subtracted from the larger value.
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
Simplified outline Symbol
654
654
123
001aab555
TR2
TR1
123
sym020
3. Ordering information
Table 4. Ordering information
Type number Package
Name
Description
BCM847BV
-
plastic surface-mounted package; 6 leads
BCM847BS
SC-88
plastic surface-mounted package; 6 leads
BCM847DS
SC-74
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT666
SOT363
SOT457
4. Marking
Table 5. Marking codes
Type number
BCM847BV
BCM847BS
BCM847DS
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking code[1]
3A
M1*
R6
BCM847BV_BS_DS_6
Product data sheet
Rev. 06 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
2 of 15
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NXP Semiconductors
BCM847BV/BS/DS
NPN/NPN matched double transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
VCEO
VEBO
IC
ICM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
SOT666
open emitter
open base
open collector
single pulse;
tp ≤ 1 ms
Tamb ≤ 25 °C
-
-
-
-
-
[1][2] -
SOT363
[1] -
SOT457
[1] -
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT666
[1][2] -
SOT363
[1] -
SOT457
[1] -
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
−65
−65
Max Unit
50 V
45 V
6V
100 mA
200 mA
200 mW
200 mW
250 mW
300
300
380
150
+150
+150
mW
mW
mW
°C
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
SOT666
[1][2] - - 625 K/W
SOT363
[1] - - 625 K/W
SOT457
[1] - - 500 K/W
BCM847BV_BS_DS_6
Product data sheet
Rev. 06 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
3 of 15
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