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97SD3240 PDF даташит

Спецификация 97SD3240 изготовлена ​​​​«Maxwell Technologies» и имеет функцию, называемую «1.25Gb SDRAM 8-Meg X 40-Bit X 4-Banks».

Детали детали

Номер произв 97SD3240
Описание 1.25Gb SDRAM 8-Meg X 40-Bit X 4-Banks
Производители Maxwell Technologies
логотип Maxwell Technologies логотип 

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97SD3240 Даташит, Описание, Даташиты
97SD3240
1.25Gb SDRAMwww.DataSheet4U.com
8-Meg X 40-Bit X 4-Banks
Logic Diagram (One Amplifier)
FEATURES:
• 1.25 Gigabit ( 8-Meg X 40-Bit X 4-Banks)
• RAD-PAK® radiation-hardened against natural space
radiation
• Total Dose Hardness:
>100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
SELTH > 85 MeV/mg/cm2 @ 25°C
• JEDEC Standard 3.3V Power Supply
• Clock Frequency: 100 MHz Operation
• Operating tremperature: -55 to +125 °C
• Auto Refresh
• Single pulsed RAS
• 2 Burst Sequence variations
Sequential (BL =1/2/4/8)
Interleave (BL = 1/2/4/8)
• Programmable CAS latency: 2/3
• Power Down and Clock Suspend Modes
• LVTTL Compatible Inputs and Outputs
• Package: 132 Lead Quad Stack Pack Flat Package
DESCRIPTION:
Maxwell Technologies’ Synchronous Dynamic Random
Access Memory (SDRAM) is ideally suited for space
applications requiring high performance computing and
high density memory storage. As microprocessors
increase in speed and demand for higher density mem-
ory escalates, SDRAM has proven to be the ultimate
solution by providing bit-counts up to 1.25 Gigabits and
speeds up to 100 Megahertz. SDRAMs represent a sig-
nificant advantage in memory technology over traditional
DRAMs including the ability to burst data synchronously
at high rates with automatic column-address generation,
the ability to interleave between banks masking pre-
charge time
Maxwell Technologies’ patented RAD-PAK® packaging
technology incorporates radiation shielding in the micro-
circuit package. It eliminates the need for box shielding
for a lifetime in orbit or space mission. In a typical GEO
orbit, RAD-PAK® provides greater than 100 krads(Si)
radiation dose tolerance. This product is available with
screening up to Maxwell Technologies self-defined Class
K.
05.10.06 Rev 4
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
All data sheets are subject to change without notice 1
©2006 Maxwell Technologies
All rights reserved.









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97SD3240 Даташит, Описание, Даташиты
1.25Gb (8-Meg X 40-Bit X 4-Banks) SDRAM
Pinout Description
Vcc
NC
Vss
NC
D47
D31
D15
VSSQ
VCCQ
NC
CS6
CS4
CS2
CLK2
NC
DQM6
DQM4
DQM2
D46
D30
D14
VCCQ
VSSQ
D45
D29
D13
D44
D28
D12
NC
Vss
NC
Vcc
97SD3240
97SD3240
www.DataSheet4U.com
Vcc
NC
Vss
NC
NC
VSSQ
VCCQ
NC
CS5
CS3
CS1
CLK1
NC
DQM5
DQM3
DQM1
D35
D19
D3
VCCQ
VSSQ
D34
D18
D2
D33
D17
D1
D32
D16
D0
Vss
NC
Vcc
The 97SD3240 Consists of 5, 8-Meg X 8-Bit X 4-Banks, die.
The 132 Pin 3-layer stack package contains 2die in layer one
and two and one die in layer three. CLK1 clocks die 1, 3 and 5,
while CLK2 clocks die 2 and 4.
CKE 1-5, CS 1-5 and DQM 1-5 correspond to one of the die:
CKE1, CS1 and DQM1 control D0 - D7
CKE2, CS2 and DQM2 control D8 - D15
CKE3, CS3 and DQM3 control D16 - D23
CKE4, CS4 and DQM4 control D24 - D31
CKE5, CS5 and DQM5 control D32 - D39
05.10.06 Rev 4
All data sheets are subject to change without notice 2
©2006 Maxwell Technologies
All rights reserved.









No Preview Available !

97SD3240 Даташит, Описание, Даташиты
1.25Gb (8-Meg X 40-Bit X 4-Banks) SDRAM
97SD3240
www.DataSheet4U.com
TABLE 1. ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on any pin relative to VSS
Supply voltage relative to VSS
Short circuit output current
Operating Temperature
Storage Temperature
SYMBOL
VIN
VOUT
VCC
IOUT
TOPR
TSTG
MAX
-0.5 to VCC + 0.5
(< 4.6(max))
-0.5 to +4.6
50
-55 to +125
-65 to +150
UNIT
V
V
mA
°C
°C
TABLE 2. RECOMMENDED OPERATING CONDITIONS
(VCC = 3.3V + 0.3V, VCCQ = 3.3V + 0.3V, TA = -55 TO 125°C, UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
MIN
MAX
Supply Voltage
VCC, VCCQ1,2
3.0
3.6
VSS, VSSQ3
0
0
Input High Voltage
VIH1,4
2.0 VCC + 0.3
Input Low Voltage
VIL1,5
-0.3 0.8
1. All voltage referred to VSS
2. The supply voltage with all VCC and VCCQ pins must be on the same level
3. The supply voltage with all VSS and VSSQ pins must be on the same level
4. VIH (max) = VCC+2.0V for pulse width <3ns at VCC
5. VIL (min) = VSS-2.0V for pulse width <3ns at VSS
UNIT
V
V
V
V
TABLE 3. DELTA LIMITS
PARAMETER
DESCRIPTION
ICC1 Operating Current
ICC2P ICC2PS ICC2N ICC2NS
Power Down Standby Current
ICC3P ICC3PS ICC3N ICC3NS
Active Standby Current
1. ±10% of value specified in Table 4
VARIATION1
± 10%
± 10%
± 10%
TABLE 4. DC ELECTRICAL CHARACTERISTICS
(VCC = 3.3V + 0.3V, VCCQ = 3.3V + 0.3V, TA = -55 TO 125°C, UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
TEST CONDITIONS
SUBGROUPS MIN
Operating Current1,2,3
Standby Current in Power Down4
Standby Current in Power Down
( input signal stable)5
ICC1
ICC2P
ICC2PS
Burst length CAS Latency = 2
=1
tRC = min
CAS Latency = 3
CKE = VIL
tCK = 12 ns
CKE = VIL
tCK = 0
1, 2, 3
1, 2, 3
1, 2, 3
MAX
575
575
15
10
UNITS
mA
mA
mA
05.10.06 Rev 4
All data sheets are subject to change without notice 3
©2006 Maxwell Technologies
All rights reserved.










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