(PDF) SS8550 Datasheet - Plastic-Encapsulate Transistors PNP Silicon

Número de pieza	SS8550
Descripción	Plastic-Encapsulate Transistors PNP Silicon
Fabricantes	Weitron Technology
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No Preview Available ! www.DataSheet4U.com SS8550 Plastic-Encapsulate Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg DEVICE MARKING SS8550=SS8550D TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 SS8550 -25 -40 -5.0 -1.5 1.0 150 -55 to +150 Unit Vdc Vdc Vdc Adc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage(1) (IC= -0.1 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) Collector Cutoff Current (VCB= -40 Vdc, IE=0 Vdc) Emitter Cutoff Current(VEB = -5 Vdc, IC =0 Vdc) 1. Pulse Test: Pulse Width < 300 us, Duty Cycle <2.0% Symbol Min Max Unit V(BR)CEO -25 - Vdc V(BR)CBO -40 - Vdc V(BR)EBO -5.0 - Vdc ICBO - -0.1 uAdc IEBO - -0.1 uAdc WEITRON http://www.weitron.com.tw 1 page

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PDF SS8550 Data sheet ( Hoja de datos )