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Номер произв	MRF6S27050HSR3
Описание	RF Power Field Effect Transistors
Производители	Freescale Semiconductor
логотип
1Page No Preview Available ! Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • 3T5.0y8p04icmMaAlHS,zPi.noPguAlte=R- C7=aW8rr.ai5etrtdsWBA-@vCg.D0, .Mf0=1A%2P6eP1r5rfooMbrmaHbazinl,itcCyeh:oanVnDCnDeCl=DB2Fa.8nVdwolitdst,hID=Q = Power Gain — 16 dB Drain Efficiency — 22.5% ACPR @ 5 MHz Offset — - 42.5 dBc @ 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2600 MHz, 50 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF6S27050H Rev. 1, 12/2008 www.DataSheet4U.com MRF6S27050HR3 MRF6S27050HSR3 2500 - 2700 MHz, 7 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S27050HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S27050HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics VDSS VGS Tstg TC TJ - 0.5, +68 - 0.5, +12 - 65 to +150 150 225 Vdc Vdc °C °C °C Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 43 W CW Case Temperature 72°C, 7 W CW RθJC 0.85 0.98 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF6S27050HR3 MRF6S27050HSR3 1 No Preview Available ! Table 3. ESD Protection Characteristics Test Methodology Classwww.DataSheet4U.com Human Body Model (per JESD22 - A114) 1A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IDSS — — 10 μAdc IDSS — — 1 μAdc IGSS — — 1 μAdc On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 500 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) VGS(th) 1 2 3 Vdc VGS(Q) 2 2.8 4 Vdc VDS(on) — 0.21 0.3 Vdc Crss — 0.83 — Coss — 232 — pF pF Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 7 W Avg. W - CDMA, f = 2615 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 15 16 18 dB Drain Efficiency ηD 20.5 22.5 — % Adjacent Channel Power Ratio ACPR - 40 - 42.5 — dBc Input Return Loss IRL — - 10 — dB 1. Part internally matched both on input and output. MRF6S27050HR3 MRF6S27050HSR3 2 RF Device Data Freescale Semiconductor No Preview Available ! R1 B2 VBIAS ++ B1 C7 C6 C5 C4 C3 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z8 Z7 C1 ++ www.DataSheet4U.VcSoUPmPLY ++ C8 C9 C10 C11 C12 C13 C14 C15 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 RF Z17 OUTPUT C2 DUT Z1 0.748″ x 0.081″ Microstrip Z2 0.273″ x 0.081″ Microstrip Z3 0.055″ x 0.220″ Microstrip Z4 0.090″ x 0.440″ Microstrip Z5 0.195″ x 0.170″ Microstrip Z6 0.797″ x 0.490″ Microstrip Z7 0.082″ x 0.490″ Microstrip Z8 0.050″ x 0.476″ Microstrip Z9 0.070″ x 0.350″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB 0.091″ x 0.753″ Microstrip 0.150″ x 0.753″ Microstrip 0.153″ x 0.543″ Microstrip 0.145″ x 0.384″ Microstrip 0.446″ x 0.148″ Microstrip 0.130″ x 0.425″ Microstrip 0.384″ x 0.081″ Microstrip 0.730″ x 0.081″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRF6S27050HR3(SR3) Test Circuit Schematic Table 5. MRF6S27050HR3(SR3) Test Circuit Component Designations and Values Part Description Part Number B1 Ferrite Bead 2508051107Y0 B2 Ferrite Bead, Short 2743019447 C1, C2 4.3 pF Chip Capacitors ATC100B4R3BT500XT C3, C8 3.6 pF Chip Capacitors ATC100B3R6BT500XT C4, C11 2.2 μF, 50 V Chip Capacitors C1825C225J5RAC C5 0.01 μF, 100 V Chip Capacitor C1825C103J1RAC C6 22 μF, 25 V Tantulum Capacitor T491D226K025AT C7 47 μF, 16 V Tantalum Capacitor T491D476K016AT C9, C10 10 μF, 50 V Tantalum Capacitors T491D106K050AT C12, C13 1.0 μF, 50 V Chip Capacitors GRM32RR71H105KA01B C14 330 μF, 63 V Electrolytic Capacitor EMVY630GTR331MMH0S C15 47 μF, 50 V Electrolytic Capacitor EMVK500ADA470MHA0G R1 2.7 Ω, 1/4 W Chip Resistor CRCW12062R7FKEA Manufacturer Fair - Rite Fair - Rite ATC ATC Kemet Kemet Kemet Kemet Kemet Murata Nippon Chemi - Con United Chemi - Con Vishay RF Device Data Freescale Semiconductor MRF6S27050HR3 MRF6S27050HSR3 3
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