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PDF MRF6S27050HSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF6S27050HSR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2500 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• 3T5.0y8p04icmMaAlHS,zPi.noPguAlte=R- [email protected], .Mf0=1A%2P6eP1r5rfooMbrmaHbazinl,itcCyeh:oanVnDCnDeCl=DB2Fa.8nVdwolitdst,hID=Q =
Power Gain — 16 dB
Drain Efficiency — 22.5%
ACPR @ 5 MHz Offset — - 42.5 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2600 MHz, 50 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S27050H
Rev. 1, 12/2008
www.DataSheet4U.com
MRF6S27050HR3
MRF6S27050HSR3
2500 - 2700 MHz, 7 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S27050HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S27050HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 43 W CW
Case Temperature 72°C, 7 W CW
RθJC
0.85
0.98
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
1
1 page  
TYPICAL CHARACTERISTICS
19 24
18 ηD
23
17
Gps
16
15
IRL
14
22
VDD = 28 Vdc, Pout = 7 W (Avg.), IDQ = 500 mA
Single−Carrier W−CDMA, 3.84 MHz Channel
21
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 20
−40
13 ACPR
−50
12
ALT1
11
2500 2520 2540 2560 2580
2600 2620 2640 2660 2680
−60
−70
2700
f, FREQUENCY (MHz)
Figure 3. Single - Carrier W - CDMA Broadband Performance
@ Pout = 7 Watts Avg.
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−5
−10
−15
−20
−25
19
ηD
18
34
33
17
Gps
16
15
IRL
14
13 ACPR
32
VDD = 28 Vdc, Pout = 14 W (Avg.)
IDQ = 500 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
31
30
−30
−40
12 −50
ALT1
11
−60
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
f, FREQUENCY (MHz)
Figure 4. Single - Carrier W - CDMA Broadband Performance
@ Pout = 14 Watts Avg.
−5
−10
−15
−20
−25
20
IDQ = 1000 mA
19
18 750 mA
17
500 mA
16
15 250 mA
14
125 mA
13
12
1
VDD = 28 Vdc
f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two−Tone Measurements
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
100
−15
VDD = 28 Vdc, f1 = 2598.75 MHz, f2 = 2601.25 MHz
−20 Two−Tone Measurements
−25
IDQ = 125 mA
−30
−35 250 mA
−40
750 mA
−45
−50 1000 mA
500 mA
−55
0.5
1
10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
5
5 Page 
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
www.DataSheet4U.com
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
Date
Nov. 2006
Dec. 2008
Description
• Initial Release of Data Sheet
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
• Replaced Fig. 14, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
11
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| PDF Descargar | [ Datasheet MRF6S27050HSR3.PDF ] | |
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