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Номер произв MRF6S27050HSR3
Описание RF Power Field Effect Transistors
Производители Freescale Semiconductor
логотип Freescale Semiconductor логотип 



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MRF6S27050HSR3 Даташит, Описание, Даташиты
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2500 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
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Power Gain — 16 dB
Drain Efficiency — 22.5%
ACPR @ 5 MHz Offset — - 42.5 dBc @ 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2600 MHz, 50 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S27050H
Rev. 1, 12/2008
www.DataSheet4U.com
MRF6S27050HR3
MRF6S27050HSR3
2500 - 2700 MHz, 7 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S27050HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S27050HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 43 W CW
Case Temperature 72°C, 7 W CW
RθJC
0.85
0.98
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
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MRF6S27050HSR3 Даташит, Описание, Даташиты
Table 3. ESD Protection Characteristics
Test Methodology
Classwww.DataSheet4U.com
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10 μAdc
IDSS
1 μAdc
IGSS
1 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 μAdc)
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 500 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th)
1
2
3 Vdc
VGS(Q)
2
2.8
4 Vdc
VDS(on)
0.21
0.3
Vdc
Crss — 0.83 —
Coss — 232 —
pF
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 7 W Avg. W - CDMA, f = 2615 MHz,
Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps 15 16 18 dB
Drain Efficiency
ηD 20.5 22.5 —
%
Adjacent Channel Power Ratio
ACPR - 40 - 42.5
dBc
Input Return Loss
IRL — - 10 — dB
1. Part internally matched both on input and output.
MRF6S27050HR3 MRF6S27050HSR3
2
RF Device Data
Freescale Semiconductor









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MRF6S27050HSR3 Даташит, Описание, Даташиты
R1
B2
VBIAS
++
B1
C7 C6 C5 C4 C3
RF
INPUT Z1
Z2 Z3 Z4 Z5 Z6
Z8
Z7
C1
++
www.DataSheet4U.VcSoUPmPLY
++
C8 C9 C10 C11 C12 C13 C14 C15
Z9
Z10 Z11 Z12 Z13 Z14 Z15 Z16
RF
Z17 OUTPUT
C2
DUT
Z1 0.748x 0.081Microstrip
Z2 0.273x 0.081Microstrip
Z3 0.055x 0.220Microstrip
Z4 0.090x 0.440Microstrip
Z5 0.195x 0.170Microstrip
Z6 0.797x 0.490Microstrip
Z7 0.082x 0.490Microstrip
Z8 0.050x 0.476Microstrip
Z9 0.070x 0.350Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.091x 0.753Microstrip
0.150x 0.753Microstrip
0.153x 0.543Microstrip
0.145x 0.384Microstrip
0.446x 0.148Microstrip
0.130x 0.425Microstrip
0.384x 0.081Microstrip
0.730x 0.081Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, εr = 2.55
Figure 1. MRF6S27050HR3(SR3) Test Circuit Schematic
Table 5. MRF6S27050HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
B1 Ferrite Bead
2508051107Y0
B2
Ferrite Bead, Short
2743019447
C1, C2
4.3 pF Chip Capacitors
ATC100B4R3BT500XT
C3, C8
3.6 pF Chip Capacitors
ATC100B3R6BT500XT
C4, C11
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
C5
0.01 μF, 100 V Chip Capacitor
C1825C103J1RAC
C6
22 μF, 25 V Tantulum Capacitor
T491D226K025AT
C7
47 μF, 16 V Tantalum Capacitor
T491D476K016AT
C9, C10
10 μF, 50 V Tantalum Capacitors
T491D106K050AT
C12, C13
1.0 μF, 50 V Chip Capacitors
GRM32RR71H105KA01B
C14
330 μF, 63 V Electrolytic Capacitor
EMVY630GTR331MMH0S
C15
47 μF, 50 V Electrolytic Capacitor
EMVK500ADA470MHA0G
R1
2.7 Ω, 1/4 W Chip Resistor
CRCW12062R7FKEA
Manufacturer
Fair - Rite
Fair - Rite
ATC
ATC
Kemet
Kemet
Kemet
Kemet
Kemet
Murata
Nippon Chemi - Con
United Chemi - Con
Vishay
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
3










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