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STI11NM60ND PDF даташит

Спецификация STI11NM60ND изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв STI11NM60ND
Описание Power MOSFET ( Transistor )
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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STI11NM60ND Даташит, Описание, Даташиты
STD11NM60ND, STF/I11NM60ND
STP11NM60ND, STU11NM60ND
N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET
I2PAK, TO-220, TO-220FP, IPAK, DPAK
Features
Order codes VDSS (@Tjmax) RDS(on) max ID
STD11NM60ND
STF11NM60ND
STI11NM60ND
STP11NM60ND
STU11NM60ND
650 V
< 0.45 Ω
10 A
10 A(1)
10 A
10 A
10 A
1. Limited only by maximum temperature allowed
The worldwide best RDS(on)* area amongst the
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
Description
The device is an N-channel FDmesh™ II Power
MOSFET that belongs to the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company's strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1. Device summary
Order codes
Marking
STD11NM60ND
STF11NM60ND
STI11NM60ND
STP11NM60ND
STU11NM60ND
11NM60ND
3
1
DPAK
3
2
1
TO-220
IPAK
3
2
1
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Package
DPAK
TO-220FP
I2PAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
Tube
October 2010
Doc ID 14625 Rev 2
1/19
www.st.com
19









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STI11NM60ND Даташит, Описание, Даташиты
Contents
Contents
STD/F/I/P/U11NM60ND
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19 Doc ID 14625 Rev 2









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STI11NM60ND Даташит, Описание, Даташиты
STD/F/I/P/U11NM60ND
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
DPAK/I²PAK,
TO-220/IPAK
TO-220FP
VDS Drain-source voltage (VGS=0)
600
VGS Gate-source voltage
± 25
ID Drain current (continuous) at TC = 25°C
10 10 (1)
ID Drain current (continuous) at TC = 100°C
6.3 6.3(1)
IDM (2) Drain current (pulsed)
40 40 (1)
PTOT Total dissipation at TC = 25°C
90 25
dv/dt (3) Peak diode recovery voltage slope
40
VISO
Tstg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
Storage temperature
2500
-55 to 150
Tj Max. operating junction temperature
150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 10 A, di/dt 400 A/µs, VDD = 80% V(BR)DSS, peak VDS V(BR)DSS
Unit
V
V
A
A
A
W
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220 I²PAK DPAK IPAK TO-220FP
Rthj-case
Thermal resistance junction-case
max
Rthj-amb Thermal resistance junction-amb max
Rthj-pcb(1) Thermal resistance junction-pcb max
Tl
Maximum lead temperature for
soldering purposes
1.38 5 °C/W
62.5 100 62.5 °C/W
50 °C/W
300 300 °C
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Doc ID 14625 Rev 2
3/19










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