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PDF MRF1090MB Data sheet ( Hoja de datos )
| Número de pieza | MRF1090MB | |
| Descripción | MICROWAVE POWER TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistors
Designed for Class B and C common base amplifier applications in short
pulse TACAN, IFF, and DME transmitters.
• Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 90 Watts Peak
Minimum Gain = 8.4 dB
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Industry Standard Package
• Nitride Passivated
• Gold Metallized for Long Life and Resistance to Metal Migration
• Internal Input Matching for Broadband Operation
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRF1090MA/D
www.DataSheet4U.com
MRF1090MA
MRF1090MB
90 W PEAK, 960 – 1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
CASE 332–04, STYLE 1
(MRF1090MA)
Rating
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Peak (1)
Total Device Dissipation @ TC = 25°C (1) (2)
Derate above 25°C
Storage Temperature Range
Symbol
VCBO
VEBO
IC
PD
Tstg
Value
70
4.0
6.0
290
1.66
– 65 to +150
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
CASE 332A–03, STYLE 1
(MRF1090MB)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
RθJC
Max
0.6
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V(BR)CES
70
—
— Vdc
Collector–Base Breakdown Voltage
(IC = 25 mAdc, IE = 0)
V(BR)CBO
70
—
— Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
— Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
ICBO
—
— 5.0 mAdc
ON CHARACTERISTICS
DC Current Gain (4)
(IC = 2.5 Adc, VCE = 5.0 Vdc)
hFE 10 30 — —
NOTES:
(continued)
1. Pulse Width = 10 µs, Duty Cycle = 1%.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4. 80 µs Pulse on Tektronix 576 or equivalent.
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF1090MA MRF1090MB
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MOTOROLA RF DEVICE DATA
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