4435BZ PDF даташит
Спецификация 4435BZ изготовлена «Fairchild Semiconductor» и имеет функцию, называемую « FDS4435BZ». |
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Детали детали
Номер произв | 4435BZ |
Описание | FDS4435BZ |
Производители | Fairchild Semiconductor |
логотип |
6 Pages
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FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20mΩ
Features
Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A
Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and current handling capability
Termination is Lead-free and RoHS compliant
June 2007
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
D
D
D
D
Pin 1
SO-8
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
EAS
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
TA = 25°C
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
(Note 4)
Ratings
-30
±25
-8.8
-50
2.5
1.0
24
-55 to +150
Units
V
V
A
W
mJ
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
25
50
°C/W
Device Marking
FDS4435BZ
Device
FDS4435BZ
Package
SO-8
Reel Size
13’’
Tape Width
12mm
Quantity
2500units
©2007 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
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Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250µA, VGS = 0V
-30
ID = -250µA, referenced to 25°C
-21
VDS = -24V, VGS = 0V
VGS = ±25V, VDS = 0V
V
mV/°C
1 µA
±10 µA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250µA
ID = -250µA, referenced to 25°C
VGS = -10V, ID = -8.8A
VGS = -4.5V, ID = -6.7A
VGS = -10V, ID = -8.8A, TJ = 125°C
VDS = -5V, ID = -8.8A
-1
-2.1
6
16
26
22
24
-3 V
mV/°C
20
35 mΩ
28
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = -15V, VGS = 0V,
f = 1MHz
f = 1MHz
1385
275
230
4.5
1845
365
345
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -15V, ID = -8.8A,
VGS = -10V, RGEN = 6Ω
VGS = 0V to -10V
VGS = 0V to -5V
VDD = -15V,
ID = -8.8A
10 20 ns
6 12 ns
30 48 ns
12 22 ns
28 40 nC
16 23 nC
5.2 nC
7.4 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -8.8A (Note 2)
-0.9 -1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -8.8A, di/dt = 100A/µs
29 44 ns
23 35 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 125°C/W when mounted on
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V
©2007 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25°C unless otherwise noted
50
VGS = -10V
VGS = -5V
40
VGS = -4.5V
30
20 VGS = -4V
10
0
0
VGS = -3.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
123
-VDS, DRAIN TO SOURCE VOLTAGE (V)
4
Figure 1. On-Region Characteristics
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4.0
VGS = -3.5V
3.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
3.0
VGS = -4.5V
2.5
VGS = -4V
VGS = -5V
2.0
1.5
VGS = -10V
1.0
0.5
0
10 20 30 40
-ID, DRAIN CURRENT(A)
50
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = -8.8A
VGS = -10V
1.4
60
ID = -8.8A PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
50
1.2 40
1.0
TJ = 125oC
30
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
20
10
2
TJ = 25oC
468
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
VDS = -5V
30
20
TJ = 150oC
10
0
1
TJ = 25oC
TJ =-55oC
234
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
100
VGS = 0V
10
1
0.1
0.01
0.001
TJ = 150oC
TJ = 25oC
TJ = -55oC
0.0001
0.0
0.2 0.4 0.6 0.8 1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2007 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C
3
www.fairchildsemi.com
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