J599 PDF даташит
Спецификация J599 изготовлена «NEC» и имеет функцию, называемую «P-Channel MOSFET ( Transistor ) - 2SJ599». |
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Детали детали
Номер произв | J599 |
Описание | P-Channel MOSFET ( Transistor ) - 2SJ599 |
Производители | NEC |
логотип |
4 Pages
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PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ599
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ599 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
• Low on-state resistance:
RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A)
RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A)
• Low Ciss: Ciss = 1300 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ599
TO-251
2SJ599-Z
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
Gate to Source Voltage (VDS = 0 V)
VGSS
+20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
+20
+50
Total Power Dissipation (TC = 25°C) PT 35
Total Power Dissipation (TA = 25°C)
PT 1.0
Channel Temperature
www.DataSSthoereatg4Ue .Tcoemmperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tch 150
Tstg –55 to +150
IAS –20
EAS 40
V
V
A
A
W
W
°C
°C
A
mJ
(TO-251)
(TO-252)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = –20 V ¡ 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14644EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP(K)
Printed in Japan
©
2000
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2SJ599
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
IDSS VDS = –60 V, VGS = 0 V
IGSS VGS = +20 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = –10 V, ID = –1 mA
Forward Transfer Admittance
| yfs | VDS = –10 V, ID = –10 A
Drain to Source On-state Resistance
RDS(on)1 VGS = –10 V, ID = –10 A
RDS(on)2 VGS = –4.0 V, ID = –10 A
Input Capacitance
Ciss VDS = –10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
ID = –10 A,
Rise Time
tr VGS(on) = –10 V,
Turn-off Delay Time
td(off)
VDD = –30 V,
Fall Time
tf RG = 0 Ω
Total Gate Charge
QG ID = –20A,
Gate to Source Charge
QGS VDD= –48 V,
Gate to Drain Charge
QGD
VGS = –10 V
Body Diode Forward Voltage
VF(S-D) IF = –20 A, VGS = 0 V
Reverse Recovery Time
trr IF = –20 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = –100 A / µs
MIN. TYP. MAX.
–10
+10
1.5 2.0 2.5
8 16
60 75
78 111
1300
240
100
8
9
52
16
26
5
7
1.0
51
102
UNIT
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
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RG = 25 Ω
PG
VGS = –20 V → 0 V
50 Ω
L
VDD
− IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS (−)
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS (−)
VGS
Wave Form
10%
0
VDS (−)
90%
VDS
VDS 0
Wave Form
td(on)
VGS(on) 90%
10% 10%
90%
tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = −2 mA
PG. 50 Ω
RL
VDD
2 Preliminary Data Sheet D14644EJ1V0DS
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PACKAGE DRAWINGS (Unit : mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
2SJ599
6.5±0.2
5.0±0.2
4
123
1.1±0.2
2.3±0.2
0.5±0.1
2.3 2.3
0.5-+00..12
0.5-+00..12
1.Gate
2.Drain
3.Source
4.Fin (Drain)
6.5±0.2
5.0±0.2
4
2.3±0.2
0.5±0.1
123
1.1±0.2
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection Source
Diode
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Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Preliminary Data Sheet D14644EJ1V0DS
3
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J598 | P-Channel MOSFET ( Transistor ) - 2SJ598 | NEC |
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