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PDF TPC8027 Data sheet ( Hoja de datos )
| Número de pieza | TPC8027 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC8027
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
TPC8027
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 2.1 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 48 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
www.DataShAeveatl4aUnc.choemcurrent
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
18
72
1.9
1.0
84
18
0.029
150
−55 to 150
Note 1, Note 2, Note 3 and Note 4: See the next page.
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.08 g (typ.)
Circuit Configuration
8765
1234
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in
the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within
the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2009-09-29
1 page  
RDS (ON) – Ta
8 Common source
Pulse test
6
4
VGS = 4.5 V
ID = 4.5,9,18 A
2 ID = 4.5,9,18 A
VGS = 10 V
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8027
1000
100 10
4.5
10
1
IDR – VDS
3
1
Common source
Ta = 25°C
Pulse test
VGS = 0 V
0.1
0
−0.2
−0.4
−0.6
−0.8
−1.0
Drain−source voltage VDS (V)
10000
Capacitance – VDS
Ciss
1000
Coss
Crss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
100
0.1
1
10
www.DataSheet4U.com Drain−source voltage VDS
(V)
100
Vth – Ta
2.5
2
1.5
1
0.5 Common source
VDS = 10 V
ID = 1mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1)Device mounted on a glass-epoxyboard
(a)(Note 2a)
(2)Device mounted on a glass-epoxyboard
(b)(Note 2b)
t = 10 s
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
50 Common source 20
ID = 18 A
Ta = 25°C
40
Pulse test
16
30
VDS = 24V
20
10
VDD = 6V
12
24
VGS
12
8
4
00
0 20 40 60 80 100 120 140 160
Total gate charge Qg (nC)
5 2009-09-29
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8027.PDF ] | |
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