TMA5x PDF даташит
Спецификация TMA5x изготовлена «Sanken electric» и имеет функцию, называемую «Triac». |
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Детали детали
Номер произв | TMA5x |
Описание | Triac |
Производители | Sanken electric |
логотип |
12 Pages
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TMA5x Series
Triac (Bidirectional Triode Thyristor)
Features and Benefits
▪ Exceptional reliability
▪ Small fully-molded SIP package with heatsink mounting
for high thermal dissipation and long life
▪ VDRM of 400 or 600 V
▪ 5 ARMS on-state current
▪ Uniform switching
▪ UL Recognized Component (File No.: E118037) (suffix I)
Description
This Sanken triac (bidirectional triode thyristor) is designed
for AC power control, providing reliable, uniform switching
for full-cycle AC applications.
In comparison with other products on the market, the TMA5x
series provides increased isolation voltage (1800 VACRMS),
guaranteed for up to 1 minute, and greater peak nonrepetitive
off-state voltage, VDSM (700 V). In addition, commutation
dv/dt and (dv/dt)c are improved.
Package: 3-pin SIP (TO-220F)
Applications
▪ Residential and commercial appliances: vacuum cleaners,
rice cookers, TVs, home entertainment
▪ White goods: washing machines
▪ Office automation power control, photocopiers
▪ Motor control for small tools
▪ Temperature control, light dimmers, electric blankets
▪ General use switching mode power supplies (SMPS)
Not to scale
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Typical Applications
Halogen
Lamp
Heater control
(for example, LBP. PPC, MFP)
28105.11
Gate
Controller
Two-phase motor control
(for example, washing machine)
In-rush current control
(for example, SMPS)
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TMA5x
Series
Triac (Bidirectional Triode Thyristor)
Selection Guide
Part Number
TMA54(I)
TMA54S-L
TMA56(I)
TMA56S-L
VDRM
(V)
400
400
600
600
UL-Recognized
Component
Yes
–
Yes
–
Package
3-pin fully molded SIP with
heatsink mount
Packing
50 pieces per tube
Absolute Maximum Ratings
Characteristic
Peak Repetitive Off-State Voltage
Peak Non-Repetitive Off-State Voltage
Isolation Voltage
RMS On-State Current
Surge On-State Current
I2t Value for Fusing
Peak Gate Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDRM
VDSM
VISO
IT(RMS)
ITSM
I2t
IGM
PGM
PGM(AV)
TJ
Tstg
Notes
TMA34x
TMA36x
RGREF = ∞
TMA34x
TMA36x
RGREF = ∞
AC RMS applied for 1 minute between lead and case
50/60 Hz full cycle sine wave,
total Conduction angle (α+) + (α–) = 360°,
TC = 102°C
f = 60 Hz
f = 50 Hz
Full cycle sine wave, peak value, non-repetitive,
initial TJ = 125°C
Value for 50 Hz half cycle sine wave, 1 cycle, ITSM = 50 A
f ≥ 50 Hz, duty cycle ≤ 10%
f ≥ 50 Hz, duty cycle ≤ 10%
TJ < TJ(max)
Rating
400
600
500
700
1800
5
Units
V
V
V
V
V
A
53
50
12.5
2
5
0.5
–40 to 125
–40 to 125
A
A
A2• s
A
W
W
ºC
ºC
Thermal Characteristics May require derating at maximum conditions
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Characteristic
Symbol
Test Conditions
Package Thermal Resistance
(Junction to Case)
RθJC For AC
Value
4
Units
ºC/W
Pin-out Diagram
T2
G
T1
Number
1
2
3
Terminal List Table
Name
Function
T1 Main terminal, gate referenced
T2 Main terminal connect to signal side
G Gate control
1 23
All performance characteristics given are typical values for circuit or
system baseline design only and are at the nominal operating voltage and
an ambient temperature, TA, of 25°C, unless otherwise stated.
2
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TMA5x
Series
Triac (Bidirectional Triode Thyristor)
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Test Conditions
Off-State Leakage Current
On-State Voltage
Gate Trigger Voltage
IDRM
VTM
VGT
VD = VDRM, TJ = 125°C, RGREF = ∞ using test circuit 1
VD = VDRM, TJ = 25°C, RGREF = ∞ using test circuit 1
IT = 7 A, TJ = 25°C
Quadrant I: T2+, G+
Quadrant II: T2+, G– VD = 12 V, RL = 20 Ω, TJ = 25°C
Quadrant III: T2–, G–
Gate Trigger Current
Gate Non-trigger Voltage
Critical Rising Rate of
Off-State Voltage during
Commutation*
Quadrant I: T2+, G+
IGT Quadrant II: T2+, G– VD = 12 V, RL = 20 Ω, TJ = 25°C
Quadrant III: T2–, G–
VGD VD = VDRM × 0.5, RL = 4 kΩ, TJ = 125°C
(dv/dt)c TJ = 125°C, VD = 400 V, (di/dt)c = –2.5 A/ms, ITP = 2 A
*Where ITP is the peak current through T2 to T1.
Min.
–
–
–
–
–
–
–
–
–
0.2
5
Typ.
–
–
–
–
–
–
–
–
–
–
–
Max.
2.0
100
1.5
1.5
1.5
1.5
20
20
20
–
–
Unit
mA
μA
V
V
V
V
mA
mA
mA
V
V/μs
Test Circuit 1
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∞RGREF =
G
T2
T1
Gate Trigger Characteristics
Quadrant II
+T2
Quadrant I
T2 [ + ]
T2 [ + ]
G[–]
G[+]
T1 [ – ]
T1 [ – ]
–IGT
T2 [ – ]
G[–]
T1 [ + ]
T2 [ – ]
+IGT
G[+]
T1 [ + ]
Quadrant III
–T2
Polarities referenced to T1
Quadrant IV
3
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