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MBR230LSFT1 PDF даташит

Спецификация MBR230LSFT1 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES».

Детали детали

Номер произв MBR230LSFT1
Описание SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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MBR230LSFT1 Даташит, Описание, Даташиты
MBR230LSFT1
Surface Mount
Schottky Power Rectifier
Plastic SOD-123 Package
This device uses the Schottky Barrier principle with a large area
metal-to-silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC-DC and
DC-DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
ăGuardring for Stress Protection
ăLow Forward Voltage
ă125°C Operating Junction Temperature
ăEpoxy Meets UL 94 V-0
ăPackage Designed for Optimal Automated Board Assembly
ăESD Ratings: Machine Model, C
Human Body Model, 3B
ăThis is a Pb-Free Device
Mechanical Characteristics
ăReel Options: MBR230LSFT1 = 3,000 per 7 in reel/8 mm tapeā
www.DataSăDheeevt4icUe.cMomarking: L3N
ăPolarity Designator: Cathode Band
ăWeight: 11.7 mg (approximately)
ăCase: Epoxy, Molded
ăLead Finish: 100% Matte Sn (Tin)
ăLead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ăDevice Meets MSL 1 Requirements
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES, 30 VOLTS
SOD-123FL
CASE 498
PLASTIC
MARKING DIAGRAM
L3N MG
G
L3N = Specific Device Code
M = Date Code
G = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MBR230LSFT1G SOD-123FL 3000/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
©Ă Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 0
1
Publication Order Number:
MBR230LSFT1/D









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MBR230LSFT1 Даташит, Описание, Даташиты
MBR230LSFT1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
30 V
VRWM
VR
Average Rectified Forward Current (At Rated VR, TL = 105°C)
IO 2.0 A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TL = 95°C)
IFRM
4.0 A
Non-Repetitive Peak Surge Current
(Non-Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
40 A
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR, TJ = 25°C)
THERMAL CHARACTERISTICS
Tstg
TJ
dv/dt
-55 to 150
-55 to 125
10,000
°C
°C
V/ms
Thermal Resistance, Junction-to-Lead (Note 1)
Thermal Resistance, Junction-to-Lead (Note 2)
Thermal Resistance, Junction-to-Ambient (Note 1)
Thermal Resistance, Junction-to-Ambient (Note 2)
Rtjl 26 °C/W
Rtjl 21
Rtja 325
Rtja 82
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 1.0 A)
(IF = 2.0 A)
Maximum Instantaneous Reverse Current (Note 3)
(VR = 30 V)
3. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%.
VF
TJ = 25°C TJ = 100°C
V
0.38 0.30
0.43 0.37
IR TJ = 25°C TJ = 100°C mA
1.0 25
www.DataSheet4U.com
http://onsemi.com
2









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MBR230LSFT1 Даташит, Описание, Даташиты
MBR230LSFT1
TYPICAL CHARACTERISTICS
10 10
TJ = 125°C
1
TJ = 100°C
TJ = 25°C
TJ = -55°C
0.1
0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1 TJ = 125°C
TJ = 100°C
0.1
0.10
TJ = 25°C TJ = -55°C
0.20 0.30 0.40 0.50 0.60
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
0.70
100E-3
10E-3
1E-3
TJ = 125°C
TJ = 100°C
100E-6
10E-6
TJ = 25°C
1E-6
100E-9
TJ = -55°C
10E-9
1E-9
0
10 20
VR, REVERSE VOLTAGE (VOLTS)
www.DataSheet4U.com Figure 3. Typical Reverse Current
1E+0
100E-3
10E-3
1E-3
100E-6
30 10E-6 0
TJ = 125°C
TJ = 100°C
TJ = 25°C
TJ = -55°C
10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
30
3.5
dc
3
2.5
square wave freq = 20 kHz
2 Ipk/IO = p
1.5 Ipk/IO = 5
1
0.5
0
25 35 45 55 65 75 85 95 105 115 125
TL, LEAD TEMPERATURE (°C)
Figure 5. Current Derating
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
square wave
Ipk/IO = p
Ipk/IO = 5
dc
0.5 1.0 1.5 2.0 2.5 3.0
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
3.5
http://onsemi.com
3










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Номер в каталогеОписаниеПроизводители
MBR230LSFT1SCHOTTKY BARRIER RECTIFIER 2.0 AMPERESON Semiconductor
ON Semiconductor
MBR230LSFT1GSurface Mount Schottky Power RectifierON Semiconductor
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MBR230LSFT1GSurface Mount Schottky Power RectifierON Semiconductor
ON Semiconductor

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