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PDF 2SF292200HYY Data sheet ( Hoja de datos )
| Número de pieza | 2SF292200HYY | |
| Descripción | FAST RECOVERY DIODE CHIPS | |
| Fabricantes | Silan Microelectronics | |
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2SF292200HYY
2SF292200HYY FAST RECOVERY DIODE CHIPS
DESCRIPTION
Ø 2SF292200HYY is a fast recovery diode chips
fabricated in silicon epitaxial planar technology;
Ø Fast recovery times;
Ø High current capability;
Ø High surge current capability;
Ø Low forward voltage drop;
Ø Low reverse current leakage;
Ø Top metal is Ag, Back metal is Ag;
Ø Chip Size: 2920µm X 2920µm;
Ø Chip Thickness: 280±20µm;
Chip Topography and Dimensions
La: Chip Size:2920 µm;
Lb: Pad Size: 2840 µm;
ORDERING SPECIFICATIONS
Product Name
2SF292200HYY
Specification
For Au and AlSi wire bonding
package
ABSOLUTE MAXIMUM RATINGS
Parameters
www.DataSheMeta4xUim.coumm Repetitive Peak Reverse Voltage
Average Forward RectifiedCurrent@Tc=150°C
Peak Forward Surge [email protected]
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
VRRM
IFAV
IFSM
TJ
TSTG
Ratings
200
20
390
175
-55~175
Unit
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25 )
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Reverse recovery time
Symbol
VBR
VF1
VF2
IR
Trr
Test Conditions
IR=50 A
IF=5A
IF=20A
VR=200V
IF=0.5A,IR=1A;Irr=0.25A
Min.
200
--
--
--
--
Max.
--
0.84
0.96
25
200
Unit
V
V
V
A
ns
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2008.06.06
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