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MP04TT600 PDF даташит

Спецификация MP04TT600 изготовлена ​​​​«Dynex Semiconductor» и имеет функцию, называемую «Dual Thyristor Water Cooled Module Preliminary Information».

Детали детали

Номер произв MP04TT600
Описание Dual Thyristor Water Cooled Module Preliminary Information
Производители Dynex Semiconductor
логотип Dynex Semiconductor логотип 

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MP04TT600 Даташит, Описание, Даташиты
MP04TT600
FEATURES
s Dual Device Module
s Electrically Isolated Package
s Pressure Contact Construction
s International Standard Footprint
s Alumina (Non Toxic) Isolation Medium
s Integral Water Cooled Heatsink
APPLICATIONS
s Motor Control
s Controlled Rectifier Bridges
s Heater Control
s AC Phase Control
MP04TT600
Dual Thyristor Water Cooled Module
Preliminary Information
DS5466-1.1 June 2001
KEY PARAMETERS
VDRM
IT(AV)
ITSM(per arm)
IT(RMS)
Visol
1800V
580A
14000A
912A
3000V
5 (G1)
6 (G2)
4 (K1)
3 (A)
7 (K2)
2 (A)
1 (AK)
Fig. 1 TT Circuit diagram
VOLTAGE RATINGS
Type Number
MP04TT600-18
wwwM.DPat0a4SThTee6t040U-.1co7m
MP04TT600-16
MP04TT600-15
Repetitive Peak
Voltages
VDRM VRRM
V
1800
1700
1600
1500
Lower voltage grades available
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 50mA
V =V =
DSM
RSM
V = V + 100V
DRM
RRM
respectively
ORDERING INFORMATION
Order As:
MP04TT600-XX-W2
MP04TT600-XX-W3
MP04TT600-XX-W3A
1/4 - 18 NPT connection
1/4 - 18 NPT connection
1/4 - 18 NPT water connection
thread
XX shown in the part number about represents VDRM/100
selection required, eg. MP04TT600-27-W2
Note: When ordering, please use the complete part number.
Module outline type code: Module outline type code:
MP04-W3
MP04-W3A
Module outline type code: MP04-W2
(See Package Details for further information)
Fig. 2 Module package variants - (not to scale)
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MP04TT600 Даташит, Описание, Даташиты
MP04TT600
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
Parameter
Test Conditions
Max. Units
IT(AV)
IT(RMS
ITSM
I2t
I
TSM
I2t
Visol
Mean on-state current
Half wave resistive load,
Twater (in) = 25˚C 650
A
4.5 Ltr/min
Twater (in) = 40˚C 580
A
RMS value
Twater (in) = 25˚C @ 4.5 Ltr/min
1020 A
Twater (in) = 40˚C @ 4.5 Ltr/min
912 A
Surge (non-repetitive) on-current
10ms half sine, T = 125˚C
j
14 kA
I2t for fusing
VR = 0
0.975x106 A2s
Surge (non-repetitive) on-current
10ms half sine, Tj = 125˚C
11.2 kA
I2t for fusing
VR = 50% VDRM
0.625x106 A2s
Isolation voltage
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
3000 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
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R
th(j-w)
Thermal resistance - junction to water
(per thyristor)
Tvj Virtual junction temperature
Tstg Storage temperature range
- Screw torque
- Weight (nominal)
Test Conditions
dc, 4.5 Ltr/min
Half wave, 4.5 Ltr/min
3 Phase, 4.5 Ltr/min
Reverse (blocking)
-
Mounting - M6
Electrical connections - M10
-
Min. Max. Units
- 0.102 ˚C/kW
- 0.106 ˚C/kW
- 0.112 ˚C/kW
- 125 ˚C
40 125
˚C
6(53)
- Nm (lb.ins)
- 12(106) Nm (lb.ins)
- Refer to g
drawings
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MP04TT600 Даташит, Описание, Даташиты
MP04TT600
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min. Max. Units
IRRM/IDRM Peak reverse and off-state current
At
VRRM/VDRM,
T
j
=
125˚C
- 50 mA
dV/dt Linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125˚C
- 1000 V/µs
dI/dt Rate of rise of on-state current
From 67% VDRM to 500A, gate source 10V, 5- 500 A/µs
t
r
=
0.5µs,
T
j
=
125˚C
VT(TO)
Threshold voltage
At Tvj = 125˚C
- 0.85 V
r On-state slope resistance
T
At Tvj = 125˚C
- 0.38 m
Note: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
V
FGM
Peak forward gate voltage
www.DataVSFhGNeet4U.cPomeak forward gate voltage
VRGM
Peak reverse gate voltage
IFGM Peak forward gate current
P Peak gate power
GM
PG(AV)
Mean gate power
Test Conditions
VDRM = 5V, Tcase = 25oC
V = 5V, T = 25oC
DRM
case
At VDRM Tcase = 125oC
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Max. Units
3.5 V
200 mA
0.25 V
30 V
0.25 V
5V
10 A
150 W
10 W
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Номер в каталогеОписаниеПроизводители
MP04TT600Dual Thyristor Water Cooled Module Preliminary InformationDynex Semiconductor
Dynex Semiconductor

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