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UGF18CCT PDF даташит
| Спецификация UGF18CCT изготовлена «Vishay Siliconix» и имеет функцию, называемую «Dual Common-Cathode Ultrafast Plastic Rectifier». |
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Детали детали
| Номер произв | UGF18CCT |
| Описание | Dual Common-Cathode Ultrafast Plastic Rectifier |
| Производители | Vishay Siliconix |
| логотип |  |
5 Pages
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UG(F,B)18ACT thru UG(F,B)18DCT
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Plastic Rectifier
TO-220AB
ITO-220AB
UG18xCT Series
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
123
UGF18xCT Series
PIN 1
PIN 2
PIN 3
2
1
UGB18xCT Series
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
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TJ max.
18 A
50 V to 200 V
175 A
20 ns
0.95 V
150 °C
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL UG18ACT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 105 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
VRRM
VRMS
VDC
IF(AV)
IFSM
50
35
50
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
TJ, TSTG
VAC
UG18BCT UG18CCT
100 150
70 105
100 150
18
175
- 65 to + 150
1500
UG18DCT
200
140
200
UNIT
V
V
V
A
A
°C
V
Document Number: 88759 For technical questions within your region, please contact one of the following:
Revision: 09-Nov-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
No Preview Available ! |
UG(F,B)18ACT thru UG(F,B)18DCT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL UG18ACT UG18BCT UG18CCT UG18DCT UNIT
Maximum instantaneous
forward voltage per diode (1)
9.0 A
20 A
5.0 A
TJ = 100 °C
VF
1.1
1.2 V
0.95
Maximum DC reverse
current at rated DC blocking
voltage per diode
TA = 25 °C
TA = 100 °C
IR
10
300
µA
Maximum reverse recovery
time per diode
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
20 ns
Maximum reverse recovery
time per diode
Maximum stored
charge per diode
Typical junction capacitance
per diode
IF = 9.0 A, VR = 30 V,
dI/dt = 50 A/µs,
Irr = 10 % IRM
IF = 9.0 A, VR = 30 V,
dI/dt = 50 A/µs,
Irr = 10 % IRM
at 4.0 V, 1 MHz
TJ = 25 °C
TJ = 100 °C
TJ = 25 °C
TJ = 100 °C
trr
Qrr
CJ
30
50
ns
20
45
nC
30 pF
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UG18
Typical thermal resistance from junction to case per diode
RθJC
4.0
UGF18
6.0
UGB18
4.0
UNIT
°C/W
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ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
UG18DCT-E3/45
1.85
ITO-220AB
UGF18DCT-E3/45
2.00
TO-263AB
UGB18DCT-E3/45
1.35
TO-263AB
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
UGB18DCT-E3/81
UG18DCTHE3/45 (1)
UGF18DCTHE3/45 (1)
UGB18DCTHE3/45 (1)
UGB18DCTHE3/81 (1)
1.35
1.85
2.00
1.35
1.35
Note:
(1) Automotive grade AEC Q101 qualified
PACKAGE CODE
45
45
45
81
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tube
Tape and reel
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88759
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 09-Nov-07
No Preview Available ! |
UG(F,B)18ACT thru UG(F,B)18DCT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
24
Resistive or Inductive Load
20
16
12
8
4
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
1000
100
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 25 °C
0.1
0.01
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
100
TC = 105 °C
8.3 ms Single Half Sine-Wave
10
www.DataSheet4U1.com
10
Number of Cycles at 60 Hz
100
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
100
10 TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
1.6
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
60
IF = 9.0 A
VR = 30 V
50
dI/dt =
40
30
150 A/µs
100 A/µs
20 A/µs
50 A/µs
100 A/µs
50 A/µs
150 A/µs
20
10
0
0
20 A/µs
trr
Qrr
25 50 75 100 125 150 175
Junction Temperature (°C)
Figure 5. Reverse Switching Characteristics Per Diode
100
TJ = 125 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1 1 10 100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 88759 For technical questions within your region, please contact one of the following:
Revision: 09-Nov-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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| Номер в каталоге | Описание | Производители |
| UGF18CCT | ULTRAFAST EFFICIENT PLASTIC RECTIFIER |  General Semiconductor |
| UGF18CCT | Dual Common-Cathode Ultrafast Plastic Rectifier | Vishay Siliconix |
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