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RJP5001APP PDF даташит

Спецификация RJP5001APP изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Nch IGBT».

Детали детали

Номер произв RJP5001APP
Описание Nch IGBT
Производители Renesas Technology
логотип Renesas Technology логотип 

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RJP5001APP Даташит, Описание, Даташиты
RJP5001APP
Nch IGBT for Strobe Flash
Features
VCES : 500 V
TO-220FN package
High Speed Switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
Applications
Strobe flash
Maximum Ratings
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Collector-emitter voltage
Gate-emitter voltage
Collector current (Pulse)
Maximum power dissipation
Junction temperature
Storage temperature
Mass
12 3
Symbol
VCES
VGES
ICM
PC
Tj
Tstg
1
Ratings
500
±17
300
45
– 40 to +150
– 40 to +150
2.0
REJ03G1710-0100
Rev.1.00
Jul 03, 2008
2
1 : Gate
2 : Collector
3 : Emitter
3
Unit
V
V
A
W
°C
°C
g
(Tc = 25°C)
Conditions
VGE = 0 V
VCE = 0 V,
Refer to item 4 under Notes
on the Actual Specifications
CM = 2000 µF
(see performance curve)
Typical value
REJ03G1710-0100 Rev.1.00 Jul 03, 2008
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RJP5001APP Даташит, Описание, Даташиты
RJP5001APP
Electrical Characteristics
Parameter
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
V(BR)CES
ICES
IGES
VGE(th)
VCE(sat)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Min.
500
1.3
Typ.
4.7
2050
130
12
0.1
0.5
0.2
0.8
Max.
10
±0.1
2.7
10
Unit
V
µA
µA
V
V
pF
pF
pF
µs
µs
µs
µs
(Tj = 25°C)
Test conditions
IC = 100 µA, VGE = 0 V
VCE = 500 V, VGE = 0 V
VGE = ±17 V, VCE = 0 V
VCE = 10 V, IC = 1 mA
IC = 300 A, VGE = 12 V
VDS = 25 V
VGS = 0
f = 1 MHz
VDD = 300 V
ID = 12 A
VGS = 350 V
RG = 25
Performance Curves
Maximum Pulse Collector Current
400
CM = 2000 µF
Tc 70°C
RG = 30
300
200
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100
0
0 4 8 12 16 20
Gate-Emitter Voltage VGE (V)
REJ03G1710-0100 Rev.1.00 Jul 03, 2008
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RJP5001APP Даташит, Описание, Даташиты
RJP5001APP
Application Example
IXe
Vtrig
CM
+
Trigger Signal Vtrig
VCM
RG
VCE
VG IGBT
IGBT
Gate Voltage
VG
Recommended Operation Maximum Operation
Conditions
Conditions
VCM 300 V
350 V
ICP 200 A
300 A
CM 1500 µF
2000 µF
VGE 14 V
12 V
Xe Tube Current IXe
Precautions on Usage
1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
turn-off dv/dt must become less than 1000 V/µs.
2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
3. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe 300 A :
full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over 5
seconds.
4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours.
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REJ03G1710-0100 Rev.1.00 Jul 03, 2008
Page 3 of 4










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Номер в каталогеОписаниеПроизводители
RJP5001APPNch IGBTRenesas Technology
Renesas Technology

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