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RJP4301APP PDF даташит
| Спецификация RJP4301APP изготовлена «Renesas Technology» и имеет функцию, называемую «Nch IGBT». |
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Детали детали
| Номер произв | RJP4301APP |
| Описание | Nch IGBT |
| Производители | Renesas Technology |
| логотип |  |
5 Pages
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RJP4301APP
Nch IGBT for Strobe Flash
Features
• VCES : 430 V
• TO-220FN package
• High Speed Switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
Applications
Strobe flash
Maximum Ratings
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current (Pulse)
Maximum power dissipation
Junction temperature
Storage temperature
Mass
12 3
Symbol
VCES
VGES
ICM
PC
Tj
Tstg
—
1
Ratings
430
±33
200
30
– 40 to +150
– 40 to +150
2.0
REJ03G1709-0300
Rev.3.00
Oct 14, 2009
2
1 : Gate
2 : Collector
3 : Emitter
3
Unit
V
V
A
W
°C
°C
g
(Tc = 25°C)
Conditions
VGE = 0 V
VCE = 0 V,
Refer to item 4 under Notes
on the Actual Specifications
CM = 1500 μF
(see performance curve)
Typical value
REJ03G1709-0300 Rev.3.00 Oct 14, 2009
Page 1 of 4
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RJP4301APP
Electrical Characteristics
Parameter
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
V(BR)CES
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Min.
430
—
—
3.0
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
4.0
1150
125
14
0.01
0.06
0.15
0.2
Max.
—
1
±0.1
5.5
10
—
—
—
—
—
—
—
Unit
V
μA
μA
V
V
pF
pF
pF
μs
μs
μs
μs
(Tj = 25°C)
Test conditions
IC = 100 μA, VGE = 0 V
VCE = 430 V, VGE = 0 V
VGE = ±33 V, VCE = 0 V
VCE = 10 V, IC = 1 mA
IC = 200 A, VGE = 26 V
VCE = 25 V
VGS = 0
f = 1 MHz
ID = 200 A
VGS = 26 V
VCC = 300 V
RG = 25 Ω
Performance Curves
Maximum Pulse Collector Current
240
CM = 1500 μF
Tc ≤ 70°C
200 RG = 30 Ω
160
120
80
40
0
0 10 20 30 40
Gate-Emitter Voltage VGE (V)
REJ03G1709-0300 Rev.3.00 Oct 14, 2009
Page 2 of 4
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RJP4301APP
Application Example
IXe
Vtrig
CM
+
– Trigger Signal Vtrig
VCM
RG
VCE
VG IGBT
IGBT
Gate Voltage
VG
Recommended Operation Maximum Operation
Conditions
Conditions
VCM 300 V
350 V
ICP 180 A
200 A
CM 1200 μF
1500 μF
VGE 28 V
26 V
Xe Tube Current IXe
Precautions on Usage
1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
peak reverse gate current during turn-off must become less than 1 A. (In general, when RG(off) = 30 Ω, it is satisfied.)
2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
3. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 200 A :
full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over 3
seconds.
4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours.
REJ03G1709-0300 Rev.3.00 Oct 14, 2009
Page 3 of 4
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| Номер в каталоге | Описание | Производители |
| RJP4301APP | Nch IGBT | Renesas Technology |
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