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RJP4003ANS PDF даташит
| Спецификация RJP4003ANS изготовлена «Renesas Technology» и имеет функцию, называемую «Nch IGBT». |
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Детали детали
| Номер произв | RJP4003ANS |
| Описание | Nch IGBT |
| Производители | Renesas Technology |
| логотип |  |
5 Pages
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RJP4003ANS
Nch IGBT for Strobe Flash
Features
• Ultra small surface mount package (VSON-8)
• VCES: 400 V
• ICM: 150 A
• Drive voltage: 4 V
Outline
RENESAS Package code: PVSN0008JA-A
(Package name: VSON-8<TNP-8DBV>)
5
8
4
1
87 6
5
12 3
4
REJ03G1474-0100
Rev.1.00
Oct 13, 2006
1, 2, 3 : Emitter
4 : Gate
5, 6, 7, 8 : Collector
Applications
Strobe flash for cameras
Maximum Ratings
Parameter
www.DaCtaoSllheecetot4rU-e.cmoimtter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulse)
Junction temperature
Storage temperature
Symbol
VCES
VGES
VGEM
ICM
Tj
Tstg
Ratings
400
±6
±8
150
– 40 to +150
– 40 to +150
Unit
V
V
V
A
°C
°C
(Tc = 25°C)
Conditions
VGE = 0 V
VCE = 0 V
VCE = 0 V, tw = 10 s
CM = 400 µF
(see performance curve)
Rev.1.00 Oct 13, 2006 page 1 of 4
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RJP4003ANS
Electrical Characteristics
Parameter
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Symbol
V(BR)CES
ICES
IGES
VGE(th)
VCE(sat)
Cies
Min.
450
—
—
0.5
—
—
Typ.
—
—
—
0.7
5.0
5000
Max.
—
10
±10
1.5
10.0
—
Unit
V
µA
µA
V
V
pF
(Tj = 25°C)
Test conditions
IC = 1 mA, VGE = 0 V
VCE = 400 V, VGE = 0 V
VGE = ±6 V, VCS = 0 V
VCE = 10 V, IC = 1 mA
IC = 150 A, VGE = 4 V
VCE = 25 V, VGE = 10 V,
f = 1 MHz
Performance Curves
Maximum Pulse Collector Current
(Conductive Capability in Strobe Flash Applications)
200
TC = 70°C
CM = 400 µF
150 RG = 68 Ω
100
50
0
0 246 8
Gate - Emitter Voltage VGE (V)
www.DataSheet4U.com
Rev.1.00 Oct 13, 2006 page 2 of 4
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RJP4003ANS
Application Example
VCM
Trigger Transformer
Xe Tube
CM +
–
8 765
1 234
IGBT driver
RD5CYD08
RD5CYDT08
VCM
ICP
CM
VGE
Recommended Operation Maximum Operation
Conditions
Conditions
330 V
350 V
130 A
150 A
330 µF
400 µF
5V 4V
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
www.DataShtuerent4-oUf.cfodmv/dt must become less than 400 V/ µs. In general, when RG (off) = 68 Ω, it is satisfied.
3. The ground of the drive signal must be connected to pin 3 only. If the emitter terminal pins 1 and 2 in which a large
currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents
since the specified gate voltage is not applied to the IGBT within the device.
4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 150 A :
full luminescence condition) of main capacitor (CM = 400 µF). Repetition period under full luminescence
condition is over 3 seconds.
5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 6 V.
Rev.1.00 Oct 13, 2006 page 3 of 4
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| Номер в каталоге | Описание | Производители |
| RJP4003ANS | Nch IGBT | Renesas Technology |
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