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RJP4002ASA PDF даташит
| Спецификация RJP4002ASA изготовлена «Renesas Technology» и имеет функцию, называемую «Nch IGBT». |
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Детали детали
| Номер произв | RJP4002ASA |
| Описание | Nch IGBT |
| Производители | Renesas Technology |
| логотип |  |
5 Pages
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RJP4002ASA
Nch IGBT for Strobe Flash
Features
• Small surface mount package (TSSOP-8)
• VCES : 400 V
• ICM : 150 A
• Drive voltage : 2.5 V
Outline
REJ03G1473-0100
Rev.1.00
Oct 13, 2006
RENESAS Package code: PTSP0008JB-B
(Package name: TSSOP-8 <TTP-8DV>)
5
8
4
1
4321
5678
1, 2, 3, 4 : Collector
5, 6 : Emitter
7 : Emitter
(for the gate drive)
8 : Gate
Note: Pin 7 is for the gate drive only.
Note that current from the main circuit cannot flow into this section.(Please see page 3.)
Applications
Strobe flash for cameras
Maximum Ratings
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Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulse)
Junction temperature
Storage temperature
Symbol
VCES
VGES
VGEM
ICM
Tj
Tstg
Ratings
400
±4
±6
150
– 40 to +150
– 40 to +150
Unit
V
V
V
A
°C
°C
(Tc = 25°C)
Conditions
VGE = 0 V
VCE = 0 V
VCE = 0 V, tw = 10 s
CM = 400 µF
(see performance curve)
Rev.1.00 Oct 13, 2006 page 1 of 4
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RJP4002ASA
Electrical Characteristics
Parameter
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Symbol
V(BR)CES
ICES
IGES
VGE(th)
VCE(sat)
Cies
Min.
450
—
—
0.4
—
—
Typ.
—
—
—
0.6
4.5
6500
Max.
—
10
±10
1.2
9.0
—
Unit
V
µA
µA
V
V
pF
(Tj = 25°C)
Test conditions
IC = 1 mA, VGE = 0 V
VCE = 400 V, VGE = 0 V
VGE = ±4 V, VCE = 0 V
VCE = 10 V, IC = 1 mA
IC = 150 A, VGE = 2.5 V
VCE = 25 V, VGE = 10 V,
f = 1MHz
Performance Curves
Maximum Pulse Collector Current
(Conductive Capability in Strobe Flash Applications)
200
TC = 70°C
CM = 400 µF
150 RG = 30 Ω
100
50
0
0 1 2 34 56
Gate - Emitter Voltage VGE (V)
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Rev.1.00 Oct 13, 2006 page 2 of 4
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RJP4002ASA
Application Example
VCM
Trigger Transformer
Xe Tube
CM +
–
4 321
5 678
IGBT driver
RD3CYD08
VCM
ICP
CM
VGE
Recommended Operation Maximum Operation
Conditions
Conditions
330 V
350 V
130 A
150 A
300 µF
400 µF
2.85 V
2.5 V
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
turn-off dv/dt must become less than 400 V/ µs.
www.Da3ta.ShTeheet4gUr.ocuomnd of the drive signal must be connected
In
to
general, when RG (off) = 30 Ω, it is
pin 3 only. If the emitter terminal
satisfied.
pins 1 and
2
in
which
a
large
currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents
since the specified gate voltage is not applied to the IGBT within the device.
4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 150 A :
full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over 3
seconds.
5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 4 V.
Rev.1.00 Oct 13, 2006 page 3 of 4
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| Номер в каталоге | Описание | Производители |
| RJP4002ASA | Nch IGBT | Renesas Technology |
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