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H40N03E PDF даташит
| Спецификация H40N03E изготовлена «Hi-Sincerity Mocroelectronics» и имеет функцию, называемую «N-Channel Enhancement-Mode MOSFET». |
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Детали детали
| Номер произв | H40N03E |
| Описание | N-Channel Enhancement-Mode MOSFET |
| Производители | Hi-Sincerity Mocroelectronics |
| логотип |  |
5 Pages
No Preview Available ! |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200517
Issued Date : 2005.12.01
Revised Date : 2005.12.16
Page No. : 1/5
H40N03E
N-Channel Enhancement-Mode MOSFET (25V, 40A)
Features
• RDS(on)=16mΩ@VGS=10V, ID=20A
• RDS(on)=25mΩ@VGS=4.5V, ID=20A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM
H40N03E Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
Internal Schematic
Diagram
G
D
S
Maximum Ratings & Thermal Characteristics
(TA=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *1
Maximum Power Dissipation @ TC=25oC
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse
ID=35A, VDD=20V, L=0.14mH
www.JDuantacStihoene-tto4U-C.caosme Thermal Resistance
Junction-to-Ambient Thermal Resistance(PCB mounted)*2
*1: Maximum DC current limited by the package.
*2: 1-in2 2oz Cu PCB board
VDS
VGS
ID
IDM
PD
TJ,Tstg
EAS
RθJC
RθJA
Value
25
±20
40
160
50
-55 to 150
300
2.1
55
Units
V
V
A
A
W
oC
mJ
OC/W
OC/W
Switching
Test Circuit
VDD
VGEN
VIN
RG G
D
S
VOUT
Switching
Waveforms
td(on)
ton
tr td(off)
90%
toff
tf
90 %
Output, VOUT
Input, VIN 10%
10%
10%
Inverted
90%
50% 50%
Pulse Width
H40N03E
HSMC Product Specification
No Preview Available ! |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200517
Issued Date : 2005.12.01
Revised Date : 2005.12.16
Page No. : 2/5
ELectrical Characteristics
Characteristic
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Resistance
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
www.SDoautarSchee-Detr4aUin.cDomiode
Max. Diode Forward Current
Diode Forward Voltage
NOTE: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Symbol
Test Condition
Min. Typ. Max. Unit
BVDSS
RDS(on)
VGS(th)
IDSS
IGSS
Rg
gfs
VGS=0V, ID=250uA
VGS=4.5V, ID=20A
VGS=10V, ID=20A
VDS=VGS, ID=250uA
VDS=24V, VGS=0V
VGS=±20V, VDS=0V
VDS=0V, VGS=1V at 1MHz
VDS=10V, ID=35A
25 - - V
- - 25
mΩ
- - 16
1 1.6 3
V
- - 1 uA
- - ±100 nA
- 1 -Ω
- 6 -S
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=15V, ID=35A, VGS=10V
VDD=15V, RL=15Ω, ID=1A
VGEN=10V, RG=24Ω
VDS=15V, VGS=0V, f=1MHz
- 18.4 -
- 3.57 -
- 2.9 -
- 11.7 -
- 3.87 -
- 32.13 -
- 5.4 -
- 1176.3 -
- 268.43 -
- 142.67 -
nC
nS
pF
IS
VSD IS=20A, VGS=0V
- - 35 A
- 0.87 1.5 V
H40N03E
HSMC Product Specification
No Preview Available ! |
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : MOS200517
Issued Date : 2005.12.01
Revised Date : 2005.12.16
Page No. : 3/5
80
60
40
20
0
0
Fig.1 Output Characteristic
VGS=5.0V,6.0V,10.0V
4.5V
4.0V
3.5V
3.0V
1 23 4
VDS, Drain-to-Source Voltage (V)
5
Fig.2 Transfer Characteristic
60
VDS=10V
40
20
0
2
25oC
TJ=125oC
-55oC
2.5 3 3.5 4 4.5
VGS, Gate-to-Source Voltage (V)
5
Fig.3 On Resistance & Drain Current
60
55
50
45
40
35
30 VGS=4.5V
25
www.DataS20heet4U.com
15
VGS=10.0V
10
0
20 40 60
ID - Drain Current (A)
80
Fig.5 On Resistance & Junction Temperature
1.6
VGS=10V
ID=30A
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, Junction Temperature (oC)
H40N03E
Fig.4 On Resistance & Gate to Source Voltage
80
ID=20A
70
60
50
40
30 125oC
20
10 TJ =25oC
0
2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
3000
2500
Ciss
Fig.6 Capacitance
f=1MHz
VGS=0V
2000
1500
1000
500
0
0
Coss, Crss
5 10 15 20
VDS, Drain-to-Source Voltage (V)
25
HSMC Product Specification
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| Номер в каталоге | Описание | Производители |
| H40N03E | N-Channel Enhancement-Mode MOSFET | Hi-Sincerity Mocroelectronics |
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