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SPN1024 PDF даташит
| Спецификация SPN1024 изготовлена «SYNC POWER» и имеет функцию, называемую «Dual N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN1024 |
| Описание | Dual N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
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SPN1024
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN1024 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
N-Channel
20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-563 (SC-89-6L) package design
PIN CONFIGURATION( SOT-563 / SC-89-6L)
www.DataSheet4U.com
PART MARKING
2007/11/10 Ver.1
Page 1
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SPN1024
Dual N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
Symbol
S1
G1
D2
S2
G2
D1
Description
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain1
ORDERING INFORMATION
Part Number
SPN1024S56RG
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPN1024S56RG : Tape Reel ; Pb – Free
Package
SOT-563
Part Marking
B
ABSOULTE MAXIMUM RATINGS
www(.TDAat=a2S5he℃et4UU.ncolemss otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=80℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
2007/11/10 Ver.1
Typical
20
±12
0.65
0.45
1.0
0.3
0.35
0.19
-55/150
-55/150
Unit
V
V
A
A
A
W
℃
℃
Page 2
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SPN1024
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
wwwT.Duartna-SOhenetT4Uim.ceom
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID= 250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS= 20V,VGS=0V
IDSS VDS= 20V,VGS=0V
TJ=55℃
ID(on) VDS≥ 4.5V,VGS =5V
RDS(on)
gfs
VSD
VGS=4.5V,ID=0.65A
VGS=2.5V,ID=0.55A
VGS=1.8V,ID=0.45A
VDS=10V,ID=0.4A
IS=0.15A,VGS=0V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=10V,VGS=4.5V,
ID≡0.6A
VDD=10V,RL=10Ω ,
ID≡0.5A
VGEN=4.5V ,RG=6Ω
20 V
0.35 1.0
100 nA
1
5 uA
0.7 A
0.26 0.38
0.32 0.45 Ω
0.42 0.80
1.0 S
0.8 1.2 V
1.2 1.5
0.2 nC
0.3
5 10
8 15 ns
10 18
1.2 2.8
2007/11/10 Ver.1
Page 3
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