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SPN2342 PDF даташит
| Спецификация SPN2342 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN2342 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
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SPN2342
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2342 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
20V/5.0A,RDS(ON)= 35mΩ@VGS=4.5V
20V/4.5A,RDS(ON)= 40mΩ@VGS=2.5V
20V/4.0A,RDS(ON)= 48mΩ@VGS=1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
PIN CONFIGURATION(SOT-23-3L)
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PART MARKING
2006/05/30 Ver.1
Page 1
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SPN2342
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
ORDERING INFORMATION
Part Number
SPN2342S23RG
Package
SOT-23-3L
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPN2342S23RG : Tape Reel ; Pb – Free
Description
Gate
Source
Drain
Part Marking
42YW
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
wwwP.DualtsaeSdheDert4aUin.coCmurrent
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
20
±12
4.0
3.0
13
1.0
1.25
0.8
-55/150
-55/150
140
Unit
V
V
A
A
A
W
℃
℃
℃/W
2006/05/30 Ver.1
Page 2
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SPN2342
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
wwwI.nDpatuatSCheaept4aUc.ictoamnce
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS=20V,VGS=0V
IDSS VDS=20V,VGS=0V
TJ=55℃
ID(on) VDS≥5V,VGS=4.5V
RDS(on)
gfs
VSD
VGS= 4.5V,ID=5.0A
VGS= 2.5V,ID=4.5A
VGS= 1.8V,ID=4.0A
VDS=15V,ID=5.0A
IS=1.0A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=10V,VGS=4.5V
ID≡5.0A
VDS=10V,VGS=0V
f=1MHz
VDD=10V,RL=10Ω
ID≡1.0A,VGEN=4.5V
RG=6Ω
20 V
0.4 1.0
±100 nA
1
10 uA
6A
0.026
0.029
0.035
30
0.8
0.035
0.040
0.048
1.2
Ω
S
V
10 13
1.4 nC
2.1
600
120 pF
100
15 25
40 60 ns
45 65
30 40
2006/05/30 Ver.1
Page 3
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| Номер в каталоге | Описание | Производители |
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