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SPN2318 PDF даташит
| Спецификация SPN2318 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN2318 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
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SPN2318
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2318 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
40V/3.9A,RDS(ON)= 56mΩ@VGS=10V
40V/3.5A,RDS(ON)= 62mΩ@VGS=4.5V
40V/2.0A,RDS(ON)= 95 mΩ@VGS= 2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
PIN CONFIGURATION ( SOT-23-3L )
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PART MARKING
2009/07/15 Ver.1
Page 1
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SPN2318
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
SPN2318S23RGB
Package
SOT-23-3L
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPN2318S23RGB : Tape Reel ; Pb – Free ; Halogen -Free
Part Marking
18YW
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
wwwD.DraatianS-hSeoetu4rUc.ecoVmoltage
Parameter
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
40
±12
4.0
3.0
10
1.25
1.25
0.8
150
-55/150
100
2009/07/15 Ver.1
Unit
V
V
A
A
A
W
℃
℃
℃/W
Page 2
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SPN2318
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
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Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS=40V,VGS=0V
IDSS VDS=40V,VGS=0V
TJ=85℃
ID(on) VDS= 5V,VGS =4.5V
RDS(on)
gfs
VGS= 10V,ID=3.9A
VGS=4.5V,ID=3.5A
VGS=2.5V,ID=2.0A
VDS=15V,ID=6.2A
VSD IS=2.3A,VGS =0V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=15V,VGS=10V
ID= 2A
VDD=15V,RL=15Ω
ID≡1.0A,VGEN=10V
RG=6Ω
Min. Typ Max. Unit
40 V
0.5 1.2
±100 nA
1
5 uA
10 A
0.050
0.056
0.088
13
0.056
0.062
0.095
Ω
S
0.8 1.2 V
16 24
3 nC
2.5
15 20
6 12 nS
10 20
40 80
2009/07/15 Ver.1
Page 3
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| Номер в каталоге | Описание | Производители |
| SPN2318 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| Номер в каталоге | Описание | Производители |
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| LM317 | Линейный стабилизатор напряжения, 1,5 А |
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|
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