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SPN2308 PDF даташит
| Спецификация SPN2308 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN2308 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
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SPN2308
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2308 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
FEATURES
20V/2.0A,RDS(ON)=380mΩ@VGS=4.5V
20V/1.5A,RDS(ON)=450mΩ@VGS=2.5V
20V/1.0A,RDS(ON)=800mΩ@VGS=1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOT-23-3L)
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PART MARKING
2007/06/25 Ver.1
Page 1
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SPN2308
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
SPN2308S23RG
Package
SOT-23-3L
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPN2308S23RG : Tape Reel ; Pb – Free
Part Marking
08YW
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
wwwD.DraatianS-hSeoetu4rUc.ecoVmoltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25℃
TA=70℃
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
20
±12
2.0
1.5
10
1.6
1.25
0.8
-55/150
-55/150
105
Unit
V
V
A
A
A
W
℃
℃
℃/W
2007/06/25 Ver.1
Page 2
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SPN2308
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
wwwI.nDpatuatSCheaept4aUc.ictoamnce
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID= 250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS= 20V,VGS=0V
IDSS VDS= 20V,VGS=0V
TJ=55℃
ID(on) VDS≥ 4.5V,VGS =5V
RDS(on)
gfs
VSD
VGS=4.5V,ID=2.0A
VGS=2.5V,ID=1.5A
VGS=1.8V,ID=1.0A
VDS=10V,ID=1.2A
IS=0.5A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=10V,VGS=4.5V,
ID≡0.7A
VDS=10VGS=0V
f=1MHz
VDD=10V,RL=10Ω ,
ID≡1.0A
VGEN=4.5V ,RG=6Ω
20 V
0.35 1.0
100 nA
1
5 uA
2A
0.15 0.38
0.21 0.45 Ω
0.32 0.80
2.6 S
0.8 1.2 V
1.2 1.5
0.2 nC
0.3
110
34 pF
16
5 10
8 15 ns
10 18
1.2 2.8
2007/06/25 Ver.1
Page 3
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