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SPN2302A PDF даташит

Спецификация SPN2302A изготовлена ​​​​«SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET».

Детали детали

Номер произв SPN2302A
Описание N-Channel Enhancement Mode MOSFET
Производители SYNC POWER
логотип SYNC POWER логотип 

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SPN2302A Даташит, Описание, Даташиты
SPN2302A
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2302A is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
FEATURES
‹ 20V/4.0A,RDS(ON)=75m@VGS=4.5V
‹ 20V/3.4A,RDS(ON)=95m@VGS=2.5V
‹ 20V/2.8A,RDS(ON)=135m@VGS=1.8V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-23-3L package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOT-23-3L)
www.DataSheet4U.com
PART MARKING
2007/06/25 Ver.1
Page 1









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SPN2302A Даташит, Описание, Даташиты
SPN2302A
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
SPN2302AS23RG
Package
SOT-23-3L
Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
SPN2302AS23RG : Tape Reel ; Pb – Free
Part Marking
2AYW
ABSOULTE MAXIMUM RATINGS
(TA=25Unless otherwise noted)
Parameter
wwwD.DraatianS-hSeoetu4rUc.ecoVmoltage
Gate –Source Voltage
Continuous Drain Current(TJ=150)
Pulsed Drain Current
TA=25
TA=70
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25
TA=70
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
20
±12
4.0
3.4
10
1.6
1.25
0.8
-55/150
-55/150
105
Unit
V
V
A
A
A
W
/W
2007/06/25 Ver.1
Page 2









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SPN2302A Даташит, Описание, Даташиты
SPN2302A
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
wwwO.DuattpaSuhteCeta4pUa.ccoimtance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS=20V,VGS=0V
IDSS VDS=20V,VGS=0V
TJ=55
ID(on) VDS5V,VGS=4.5V
RDS(on)
gfs
VGS=4.5V,ID=4.0A
VGS=2.5V,ID=3.4A
VGS=1.8V,ID=2.8A
VDS=5V,ID=-3.6A
VSD IS=1.6A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=6V,VGS=4.5V
ID2.8A
VDS=6V,VGS=0V
f=1MHz
VDD=6V,RL=6
ID1.0A,VGEN=4.5V
RG=6
Min. Typ Max. Unit
20 V
0.4 1.0
±100 nA
1
5 uA
6A
0.060
0.075
0.105
10
0.075
0.095
0.135
S
0.8 1.2 V
4.8 8
1.0 nC
1.0
485
85 pF
40
8 14
12 18 ns
30 35
12 16
2007/06/25 Ver.1
Page 3










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