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SPN3458 PDF даташит
| Спецификация SPN3458 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN3458 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
9 Pages
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SPN3458
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN3458 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
60V/5.0A,RDS(ON)= 115Ω@VGS=10V
60V/4.5A,RDS(ON)= 125Ω@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TSOP-6P package design
PIN CONFIGURATION( TSOP– 6P )
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PART MARKING
2008/12/31 Ver.1
Page 1
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SPN3458
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
Symbol
D
D
G
S
D
D
ORDERING INFORMATION
Part Number
SPN3458ST6RGB
Package
TSOP-6P
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPN3458ST6RG : Tape Reel ; Pb – Free ; Halogen – Free
Description
Drain
Drain
Gate
Source
Drain
Drain
Part Marking
58YW
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
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Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
60
±20
5.0
4.0
10
2.0
2.0
1.3
150
-55/150
90
Unit
V
V
A
A
A
W
℃
℃
℃/W
2008/12/31 Ver.1
Page 2
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SPN3458
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
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Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
IDSS
ID(on)
RDS(on)
gfs
VDS=60V,VGS=0.0V
VDS=60V,VGS=0.0V
TJ=55℃
VDS≧4.5V,VGS=4.5V
VGS = 10V,ID=5.0A
VGS =4.5V,ID=4.5A
VDS=15V,ID=4.0A
VSD IS=2.5A,VGS=0V
60 V
0.5 1.5
±100 nA
1
10 uA
10 A
0.106 0.115
0.118 0.125
Ω
12 S
0.8 1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=30V, VGS=4.5V
ID≡4.0A
VDS=30V, VGS=0V
f=1MHz
VDD=30V ,RL=12Ω
ID≡2.5A,VGEN=10V
RG=6Ω
4.0 6
1.2 nC
1.0
320
42 pF
20
6 10
12 20 ns
18 30
10 15
2008/12/31 Ver.1
Page 3
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| Номер в каталоге | Описание | Производители |
| SPN3456 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
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| SPN3458 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
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