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SPN3632 PDF даташит
| Спецификация SPN3632 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN3632 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
9 Pages
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SPN3632
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN3632 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
100V/80A,RDS(ON)= 8.5mΩ@VGS= 10V
100V/40A,RDS(ON)= 9.8mΩ@VGS= 6.0V
100V/10A,RDS(ON)= 10mΩ@VGS= 4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-220-3L package design
APPLICATIONS
z DC/DC Converter
z Load Switch
z SMPS Secondary Side Synchronous Rectifier
PIN CONFIGURATION( TO-220-3L )
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PART MARKING
2009 / 04 / 10 Ver.1
Page 1
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SPN3632
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
ORDERING INFORMATION
Part Number
SPN3632T220TGB
Package
TO-220-3L
※ SPN3632T220TGB: Tube ; Pb – Free; Halogen – Free
Part Marking
SPN3632
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
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Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Avalanche Current
Power Dissipation
TA=25℃
TA=70℃
Avalanche Energy with Single Pulse
( Tj=25℃, L = 0.12mH , IAS = 75A , VDD = 80V. )
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IAS
PD
EAS
TJ
TSTG
RθJA
Typical
100
±20
80
80
240
60
62.5
3.38
335
-55/150
-55/150
2
2009 / 04 / 10 Ver.1
Unit
V
V
A
A
A
W
mJ
℃
℃
℃/W
Page 2
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SPN3632
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
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Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=80V,VGS=0V
IDSS VDS=80V,VGS=0V
TJ = 150 °C
ID(on) VDS≥10V,VGS =10V
RDS(on)
gfs
VGS= 10V,ID=80A
VGS= 6.0V,ID=30A
VGS= 4.5V,ID=10A
VDS=15V,ID=20A
VSD IS=30A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=50V,VGS=10V
ID= 20A
VDS=50VGS=0V
f=1MHz
VDD=50V,RL=0.6Ω
ID≡20A,VGEN=10V
RG=1.0Ω
Min. Typ Max. Unit
100 V
1.0 3.0
±100 nA
1
250 uA
70 A
7.5 8.5
8.5 9.8 mΩ
8.2 10.0
62 S
1.5 V
230
80
55
14200
800
220
75
40
100
25
nC
pF
nS
2009 / 04 / 10 Ver.1
Page 3
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| Номер в каталоге | Описание | Производители |
| SPN3632 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| Номер в каталоге | Описание | Производители |
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|
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