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SPN4416 PDF даташит
| Спецификация SPN4416 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN4416 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
9 Pages
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SPN4416
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4416 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
20V/10.0A,RDS(ON)= 14mΩ@VGS= 4.5V
20V/ 5.0A,RDS(ON)= 28mΩ@VGS= 2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
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PART MARKING
2008/03/20 Ver.1
Page 1
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SPN4416
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
S
S
S
G
D
D
D
D
ORDERING INFORMATION
Part Number
SPN4416S8RG
SPN4416S8TG
※ SPN4416S8RG : 13” Tape Reel ; Pb – Free
※ SPN4416S8TG : Tube ; Pb – Free
Package
SOP- 8P
SOP- 8P
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
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Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
Part Marking
SPN4416
SPN4416
Typical
20
±12
10.0
7.6
35
2.3
2.5
1.6
-55/150
-55/150
80
Unit
V
V
A
A
A
W
℃
℃
℃/W
2008/03/20 Ver.1
Page 2
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SPN4416
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
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Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS=20V,VGS=0V
IDSS VDS=20V,VGS=0V
TJ=55℃
ID(on) VDS≥5V,VGS=4.5V
RDS(on)
gfs
VSD
VGS= 4.5V,ID=10.0A
VGS= 2.5V,ID=5.0A
VDS=15V,ID=5.0A
IS=1.0A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=10V,VGS=4.5V
ID≡5.0A
VDS=10V,VGS=0V
f=1MHz
VDD=10V,RL=10Ω
ID≡1.0A,VGEN=4.5V
RG=6Ω
20 V
0.6 1.4
±100 nA
1
10 uA
6A
0.011
0.023
30
0.8
0.014
0.028
1.2
Ω
S
V
25 35
5.6 nC
9.6
1250
235 pF
195
20 30
18 28 ns
75 90
65 85
2008/03/20 Ver.1
Page 3
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