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SPN4850 PDF даташит
| Спецификация SPN4850 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN4850 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
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SPN4850
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4850 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
60V/7.2A,RDS(ON)= 27mΩ@VGS= 10V
60V/6.8A,RDS(ON)= 32mΩ@VGS= 4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
z DC/DC Converter
z Load Switch
PIN CONFIGURATION(SOP – 8P)
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PART MARKING
2009 / 04 / 05 Ver.2
Page 1
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SPN4850
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
S
S
S
G
D
D
D
D
ORDERING INFORMATION
Part Number
Package
SPN4850S8RG
SOP- 8P
SPN4850S8RGB
SOP- 8P
※ SPN4850S8RG : 13” Tape Reel ; Pb – Free
※ SPN4850S8RGB : 13” Tape Reel ; Pb – Free ; Halogen -Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
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Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25℃
TA=70℃
TA=25℃
TA=70℃
Symbol
VDSS
VGSS
ID
IDM
IAS
PD
TJ
TSTG
RθJA
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
Part Marking
SPN4850
SPN4850
Typical
60
±20
7.2
6.8
40
15
2.5
1.6
-55/150
-55/150
80
Unit
V
V
A
A
A
W
℃
℃
℃/W
2009 / 04 / 05 Ver.2
Page 2
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SPN4850
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
wwwR.DeavtaeSrsheeeTt4rUa.ncsofmer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=48V,VGS=0V
IDSS VDS=48V,VGS=0V
TJ=85℃
ID(on) VDS≥5V,VGS =10V
RDS(on)
VGS= 10V,ID=7.2A
VGS=4.5V,ID=6.8A
gfs VDS=15V,ID=6.2A
VSD IS=1.7A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=30V,VGS=10V
ID= 6A
VDS=30VGS=0V
f=1MHz
VDD=30V,RL=30Ω
ID≡1.0A,VGEN=10V
RG=6Ω
Min. Typ Max. Unit
60 V
1.0 3.0
±100 nA
1
5 uA
25 A
0.023
0.027
25
0.027
0.032
Ω
S
0.8 1.2 V
25 30
4.2 nC
5.3
950 1400
180 pF
115
10 20
10 20 nS
25 50
12 25
2009 / 04 / 05 Ver.2
Page 3
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| Номер в каталоге | Описание | Производители |
| SPN4850 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
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