|
SPN4920A PDF даташит
| Спецификация SPN4920A изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
|
|
Детали детали
| Номер произв | SPN4920A |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
No Preview Available ! |
SPN4920A
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4920A is the Dual N-Channel logic
enhancement mode power field effect transistors are
produced using high cell density , DMOS trench
technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
30V/6.8A,RDS(ON)= 35mΩ@VGS= 10V
30V/5.8A,RDS(ON)= 45mΩ@VGS= 4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
www.DataSheet4U.com
PART MARKING
2007/ 09 / 30 Ver.1
Page 1
No Preview Available ! |
SPN4920A
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
ORDERING INFORMATION
Part Number
SPN4920AS8RG
SPN4920AS8TG
※ SPN4920AS8RG : 13” Tape Reel ; Pb – Free
※ SPN4920AS8TG : Tube ; Pb – Free
Package
SOP- 8P
SOP- 8P
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
www.DataSheet4U.com
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
Part Marking
SPN4920A
SPN4920A
Typical
30
±20
6.8
5.8
35
1.7
2.8
1.8
-55/150
-55/150
65
Unit
V
V
A
A
A
W
℃
℃
℃/W
2007/ 09 / 30 Ver.1
Page 2
No Preview Available ! |
SPN4920A
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
www.DataSheet4U.com
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=30V,VGS=0V
IDSS VDS=30V,VGS=0V
TJ=85℃
ID(on) VDS≥5V,VGS =10V
RDS(on)
VGS= 10V,ID=6.8A
VGS=4.5V,ID=5.8A
gfs VDS=15V,ID=6.2A
VSD IS=2.0A,VGS =0V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=20V,VGS=10V
ID= 7.2A
VDD=20V,RL=20Ω
ID≡1.0A,VGEN=10V
RG=6Ω
Min. Typ Max. Unit
30 V
1.0 3.0
±100 nA
1
5 uA
20 A
0.026
0.036
13
0.035
0.045
Ω
S
0.8 1.2 V
10 15
1.8 nC
2.3
8 15
12 25 nS
15 35
10 20
2007/ 09 / 30 Ver.1
Page 3
Скачать PDF:
[ SPN4920A.PDF Даташит ]
| Номер в каталоге | Описание | Производители |
| SPN4920 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN4920A | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN4920W | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN4920WS8RGB | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| Номер в каталоге | Описание | Производители |
| TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
 Unisonic Technologies |
| IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
 Vishay |
| LM317 | Линейный стабилизатор напряжения, 1,5 А |
 STMicroelectronics |
|
DataSheet26.com | 2020 | Контакты | Поиск |