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SPN4910 PDF даташит
| Спецификация SPN4910 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN4910 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
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SPN4910
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4910 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
N-Channel
40V/10A,RDS(ON)= 20mΩ@VGS= 10V
40V/ 8A,RDS(ON)= 24mΩ@VGS= 4.5V
40V/ 6A,RDS(ON)= 30mΩ@VGS= 2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
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PART MARKING
2009/07/28 Ver.1
Page 1
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SPN4910
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
ORDERING INFORMATION
Part Number
SPN4910S8RGB
Package
SOP- 8P
※ SPN4910S8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free
e
Part Marking
SPN4910
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
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Parameter
Symbol
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T ≤ 10sec
Steady State
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
2009/07/28 Ver.1
Typical
40
±20
10.0
8.0
25
2.3
2.5
1.6
-55/150
-55/150
50
80
Unit
V
V
A
A
A
W
℃
℃
℃/W
Page 2
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SPN4910
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
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Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=40V,VGS=0V
IDSS VDS=40V,VGS=0V
TJ=85℃
ID(on) VDS= 5V,VGS =4.5V
RDS(on)
gfs
VGS= 10V,ID=10A
VGS=4.5V,ID= 8A
VGS=2.5V,ID= 6A
VDS=15V,ID=6.2A
VSD IS=2.3A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=20V,VGS=4.5V
ID= 5A
VDS=20V,VGS=0V
f=1MHz
VDD=20V,RL=4Ω
ID≡5.0A,VGEN=10V
RG=1Ω
Min. Typ Max. Unit
40 V
0.5 1.0
±100 nA
1
10 uA
10 A
0.014
0.017
0.024
13
0.020
0.024
0.030
Ω
S
0.8 1.2 V
10 14
2.8 nC
3.2
850
110 pF
75
6 12
10 20 nS
20 36
6 12
2009/07/28 Ver.1
Page 3
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| Номер в каталоге | Описание | Производители |
| SPN4910 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| Номер в каталоге | Описание | Производители |
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|
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