|
SPN4906 PDF даташит
| Спецификация SPN4906 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
|
|
Детали детали
| Номер произв | SPN4906 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
No Preview Available ! |
SPN4906
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4906 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
N-Channel
40V/6.0A,RDS(ON)= 45mΩ@VGS= 10V
40V/5.0A,RDS(ON)= 54mΩ@VGS= 4.5V
40V/4.5A,RDS(ON)= 83mΩ@VGS= 2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
www.DataSheet4U.com
PART MARKING
2009/07/20 Ver.1
Page 1
No Preview Available ! |
SPN4906
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
ORDERING INFORMATION
Part Number
Package
SPN4906S8RGB
SOP- 8P
※ SPN4906S8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
Part Marking
SPN4906
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
www.DataSheet4U.com
Parameter
Symbol
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T ≤ 10sec
Steady State
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
2009/07/20 Ver.1
Typical
40
±20
6.0
5.0
25
2.3
2.5
1.6
-55/150
-55/150
50
80
Unit
V
V
A
A
A
W
℃
℃
℃/W
Page 2
No Preview Available ! |
SPN4906
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
www.DataSheet4U.com
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS=40V,VGS=0V
IDSS VDS=40V,VGS=0V
TJ=85℃
ID(on) VDS= 5V,VGS =4.5V
RDS(on)
gfs
VGS= 10V,ID=6.0A
VGS=4.5V,ID=5.0A
VGS=2.5V,ID=4.5A
VDS=15V,ID=6.2A
VSD IS=2.3A,VGS =0V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=15V,VGS=10V
ID= 2A
VDD=15V,RL=15Ω
ID≡1.0A,VGEN=10V
RG=6Ω
Min. Typ Max. Unit
40 V
0.5 1.0
±100 nA
1
5 uA
10 A
0.040
0.047
0.075
13
0.045
0.054
0.083
Ω
S
0.8 1.2 V
16 24
3 nC
2.5
15 20
6 12 nS
10 20
40 80
2009/07/20 Ver.1
Page 3
Скачать PDF:
[ SPN4906.PDF Даташит ]
| Номер в каталоге | Описание | Производители |
| SPN4900 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN4906 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| Номер в каталоге | Описание | Производители |
| TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
 Unisonic Technologies |
| IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
 Vishay |
| LM317 | Линейный стабилизатор напряжения, 1,5 А |
 STMicroelectronics |
|
DataSheet26.com | 2020 | Контакты | Поиск |