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SPN4900 PDF даташит
| Спецификация SPN4900 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN4900 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
9 Pages
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SPN4900
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4900 is the Dual N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
60V/5.3A,RDS(ON)= 118mΩ@VGS= 10V
60V/4.7A,RDS(ON)= 125mΩ@VGS= 4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
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PART MARKING
2008/ 11/ 10 Ver.1
Page 1
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SPN4900
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
ORDERING INFORMATION
Part Number
SPN4900S8RGB
Package
SOP- 8P
※ SPN4546S8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free
Part Marking
SPN4900
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
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Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25℃
TA=70℃
TA=25℃
TA=70℃
Symbol
VDSS
VGSS
ID
IDM
IAS
PD
TJ
TSTG
RθJA
Typical
60
±20
4.2
3.2
20
11
2.5
1.6
-55/150
-55/150
80
Unit
V
V
A
A
A
W
℃
℃
℃/W
2008/ 11/ 10 Ver.1
Page 2
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SPN4900
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
wwwR.DeavtaeSrsheeeTt4rUa.ncsofmer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=60V,VGS=0V
IDSS VDS=60V,VGS=0V
TJ=85℃
ID(on) VDS≥5V,VGS =10V
RDS(on)
VGS= 10V,ID=5.3A
VGS=4.5V,ID=4.7A
gfs VDS=15V,ID=4.3A
VSD IS=1.7A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=30V,VGS=10V
ID= 4.3A
VDS=15,VGS=0V
f=1MHz
VDD=30V,RL=8.8Ω
ID≡3.4A,VGEN=10V
RG=1Ω
Min. Typ Max. Unit
60 V
0.5 1.5
±100 nA
1
5 uA
25 A
0.110
0.115
15
0.118
0.125
Ω
S
0.8 1.2 V
15 20
2.5 nC
2.6
675
80 pF
40
10 20
15 25 nS
25 35
12 20
2008/ 11/ 10 Ver.1
Page 3
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