|
SPN7510 PDF даташит
| Спецификация SPN7510 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
|
|
Детали детали
| Номер произв | SPN7510 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
No Preview Available ! |
SPN7510
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN7510 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
100V/30A,RDS(ON)= 16mΩ@VGS= 10V
100V/16A,RDS(ON)= 21mΩ@VGS= 4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-220-3L package design
APPLICATIONS
z DC/DC Converter
z Load Switch
z SMPS Secondary Side Synchronous Rectifier
PIN CONFIGURATION( TO-220-3L )
www.DataSheet4U.com
PART MARKING
2009/06/15 Ver.1
Page 1
No Preview Available ! |
SPN7510
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
ORDERING INFORMATION
Part Number
SPN7510T220TGB
Package
TO-220-3L
※ SPN7510T220TGB : Tube ; Pb – Free ; Halogen - Free
Part Marking
SPN7510
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
www.DataSheet4U.com
Drain-Source Voltage
Parameter
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Power Dissipation
TA=25℃
TA=70℃
Avalanche Energy with Single Pulse
( Tj=25℃, L = 0.12mH , IAS = 75A , VDD = 80V. )
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ
TSTG
RθJA
2009/06/15 Ver.1
Typical
100
±20
72
45
240
130
3.38
335
-55/150
-55/150
2
Unit
V
V
A
A
W
mJ
℃
℃
℃/W
Page 2
No Preview Available ! |
SPN7510
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
www.DataSheet4U.com
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=100V,VGS=0V
IDSS VDS=80V,VGS=0V
TJ = 150 °C
RDS(on) VGS= 10V,ID=30A
VGS= 4.5V,ID=16A
gfs VDS=10V,ID=30A
VSD IS=30A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=80V,VGS=4.5V
ID= 30A
VDS=25VGS=0V
f=1MHz
VDD=50V,RL=1.6Ω
ID≡30A,VGEN=10V
RG=10Ω
Min. Typ Max. Unit
100 V
1.0 3.0
±100 nA
10
100 uA
16 mΩ
21
52 S
1.3 V
69
12
39
5690
540
605
12
75
220
250
111
9100
nC
pF
nS
2009/06/15 Ver.1
Page 3
Скачать PDF:
[ SPN7510.PDF Даташит ]
| Номер в каталоге | Описание | Производители |
| SPN7510 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| Номер в каталоге | Описание | Производители |
| TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
 Unisonic Technologies |
| IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
 Vishay |
| LM317 | Линейный стабилизатор напряжения, 1,5 А |
 STMicroelectronics |
|
DataSheet26.com | 2020 | Контакты | Поиск |