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SPN7402 PDF даташит
| Спецификация SPN7402 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN7402 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
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SPN7402
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN7402 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
20V/4.0A,RDS(ON)=65mΩ@VGS=4.5V
20V/3.4A,RDS(ON)=80mΩ@VGS=2.5V
20V/2.8A,RDS(ON)=95mΩ@VGS=1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-323 ( SC – 70 ) package design
PIN CONFIGURATION ( SOT-323 ; SC-70 )
www.DataSheet4U.com
PART MARKING
2006/03//20 Ver.1
Page 1
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SPN7402
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
SPN7402S32RG
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPN7402S32RG : Tape Reel ; Pb – Free
Package
SOT-323
Part Marking
02YW
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
wwwD.DraatianS-hSeoetu4rUc.ecoVmoltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25℃
TA=70℃
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
20
±12
2.4
1.7
6
1.6
0.33
0.21
-55/150
-55/150
105
Unit
V
V
A
A
A
W
℃
℃
℃/W
2006/03//20 Ver.1
Page 2
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SPN7402
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
wwwO.DuattpaSuhteCeta4pUa.ccoimtance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS=20V,VGS=0V
IDSS VDS=20V,VGS=0V
TJ=55℃
ID(on) VDS≦5V,VGS=4.5V
RDS(on)
gfs
VGS=4.5V,ID=4.0A
VGS=2.5V,ID=3.4A
VGS=1.8V,ID=2.8A
VDS=5V,ID=-3.6A
VSD IS=1.6A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=6V,VGS=4.5V
ID≡2.8A
VDS=6V,VGS=0V
f=1MHz
VDD=6V,RL=6Ω
ID≡1.0A,VGEN=4.5V
RG=6Ω
Min. Typ Max. Unit
20 V
0.35 0.85
±100 nA
1
5 uA
6A
0.060
0.067
0.076
10
0.065
0.080
0.095
Ω
S
0.8 1.2 V
4.8 8
1.0 nC
1.0
485
85 pF
40
8 14
12 18 ns
30 35
12 16
2006/03//20 Ver.1
Page 3
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| Номер в каталоге | Описание | Производители |
| SPN7400 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN7402 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN7402 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
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