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SPN7400 PDF даташит
| Спецификация SPN7400 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN7400 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
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SPN7400
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN7400 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
30V/2.8A,RDS(ON)= 77mΩ@VGS=10V
30V/2.3A,RDS(ON)= 85mΩ@VGS=4.5V
30V/1.5A,RDS(ON)= 110mΩ@VGS=2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-323 ( SC–70 ) package design
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PIN CONFIGURATION ( SOT-323 ; SC-70 )
PART MARKING
2006/03/20 Ver.1
Page 1
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SPN7400
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
ORDERING INFORMATION
Part Number
SPN7400S32RG
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPN7400S32RG : Tape Reel ; Pb – Free
Package
SOT-323
Description
Gate
Source
Drain
Part Marking
00YW
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
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Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
30
±12
2.8
2.3
10
1.25
0.33
0.21
150
-55/150
100
Unit
V
V
A
A
A
W
℃
℃
℃/W
2006/03/20 Ver.1
Page 2
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SPN7400
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
wwwI.nDpatuatSCheaept4aUc.ictoamnce
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
IDSS
ID(on)
RDS(on)
gfs
VDS=24V,VGS=0.0V
VDS=24V,VGS=0.0V
TJ=55℃
VDS≧4.5V,VGS=10V
VDS≧4.5V,VGS=4.5V
VGS = 10V,ID=2.8A
VGS =4.5V,ID=2.3A
VGS =2.5V,ID=1.5A
VDS=4.5V,ID=2.8A
VSD IS=1.25A,VGS=0V
30 V
0.8 1.6
±100 nA
1
10 uA
6
4
A
0.062 0.077
0.070 0.085 Ω
0.095 0.110
4.6 S
0.82 1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15,VGS=4.5V
ID≡2.0A
VDS=15,VGS=0V
f =1MHz
VDD=15,RL=10Ω
VGEN=10V,RG=3Ω
4.2 6
0.6 nC
1.5
350
55 pF
41
2.5
2.5
ns
20
4
2006/03/20 Ver.1
Page 3
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| Номер в каталоге | Описание | Производители |
| SPN7400 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
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