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SPN7002L PDF даташит
| Спецификация SPN7002L изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN7002L |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
9 Pages
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SPN7002L
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN7002L is the N-Channel enhancement mode
field effect transistors are produced using high cell
density DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They
can be used in most applications requiring up to
300mA DC and can deliver pulsed currents up to 0.8A.
These products are particularly suited for low voltage,
low current applications such as small servo motor
control, power MOSFET gate drivers, and other
switching applications.
APPLICATIONS
z Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
z High saturation current capability. Direct
Logic-Level Interface: TTL/CMOS
z Battery Operated Systems
z Solid-State Relays
FEATURES
50V/0.30A , RDS(ON)= 3.5Ω@VGS=10V
50V/0.25A , RDS(ON)= 5.5Ω@VGS=4.5V
50V/0.05A , RDS(ON)= 7.5Ω@VGS=2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23 package design
PIN CONFIGURATION(SOT-23)
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PART MARKING
2009/03/10 Ver.1
Page 1
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SPN7002L
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin Symbol
1G
2S
3D
ORDERING INFORMATION
Part Number
SPN7002LS23RG
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPN7002LS23RG : Tape Reel ; Pb – Free
Package
SOT-23
Description
Gate
Source
Drain
Part Marking
L72YW
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage - Continuous
Gate –Source Voltage - Non Repetitive ( tp < 50μs)
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Continuous Drain Current(TJ=150℃)
TA=25℃
Pulsed Drain Current (∗)
Power Dissipation
Operating Junction Temperature
TA=25℃
Storage Temperature Range
Thermal Resistance-Junction to Ambient
(∗) Pulse width limited by safe operating area
Symbol
VDSS
VGSS
VGSS
ID
IDM
PD
TJ
TSTG
RθJA
Typical
50
±20
±40
0.3
0.8
0.35
-55 ~ 150
-55 ~ 150
375
Unit
V
V
V
A
A
W
℃
℃
℃/W
2009/03/10 Ver.1
Page 2
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SPN7002L
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min. Typ Max. Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Source-drain Current
Source-drain Current (pulsed)
Forward Transconductance
Diode Forward Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=45V,VGS=0V
IDSS VDS=45V,VGS=0V
TJ=125℃
VGS=10V,ID=0.30A
RDS(on) VGS= 4.5V,ID=0.25A
VGS= 2.5V,ID=0.05A
ISD
ISDM (2)
Gfs(1) VDS = 10 V, ID = 0.5 A
VSD(1) VGS = 0 V, IS = 0.12A
50 V
0.8 1.25 1.5
±100 nA
1
10 uA
2.5 3.5
3.3 5.5 Ω
5.0 7.5
0.35 A
1.4 A
0.6 S
0.85 1.5 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
wwwR.DeavtaeSrsheeeTt4rUa.ncsofmer Capacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDD = 30 V, ID = 1 A,
VGS = 5 V
VDS = 25 V, f = 1 MHz,
VGS = 0
VDD = 30 V, ID = 0.5 A
RG = 4.7Ω VGS = 4.5 V
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
1.4 2.0
0.8 nC
0.5
43
20 pF
6
5
15 ns
7
8
2009/03/10 Ver.1
Page 3
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| Номер в каталоге | Описание | Производители |
| SPN7002 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN7002D | Dual N-Channel Enhancement Mode MOSFET | SYNC POWER |
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