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SPN7002D PDF даташит
| Спецификация SPN7002D изготовлена «SYNC POWER» и имеет функцию, называемую «Dual N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN7002D |
| Описание | Dual N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
9 Pages
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SPN7002D
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN7002D is the Dual N-Channel enhancement
mode field effect transistors are produced using high
cell density DMOS technology. These products have
been designed to minimize on-state resistance while
provide rugged, reliable, and fast switching
performance. They can be used in most applications
requiring up to 300mA DC and can deliver pulsed
currents up to 1.0A. These products are particularly
suited for low voltage, low current applications such as
small servo motor control, power MOSFET gate
drivers, and other switching applications.
APPLICATIONS
z Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
z High saturation current capability. Direct
Logic-Level Interface: TTL/CMOS
z Battery Operated Systems
z Solid-State Relays
FEATURES
60V/0.50A , RDS(ON)= 5.0Ω@VGS=10V
60V/0.30A , RDS(ON)= 5.5Ω@VGS=5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-363 package design
PIN CONFIGURATION ( SOT-363 / SC-70-6L )
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PART MARKING
2006/09/10 Ver.1
Page 1
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SPN7002D
Dual N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
Symbol
S1
G1
D2
S2
G2
D1
Description
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain1
ORDERING INFORMATION
Part Number
SPN7002DS36RG
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPN7002DS36RG : Tape Reel ; Pb – Free
Package
SOT-363
Part Marking
702YW
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate –Source Voltage - Continuous
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Gate –Source Voltage - Non Repetitive ( tp < 50μs)
VGSS
VGSS
Continuous Drain Current(TJ=150℃)
TA=25℃
ID
Pulsed Drain Current (∗)
IDM
Continuous Source Current(Diode Conduction)
IS
Power Dissipation
Operating Junction Temperature
TA=25℃
PD
TJ
Storage Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
(∗) Pulse width limited by safe operating area
RθJA
Typical
60
±20
±40
0.5
1.0
0.25
0.35
-55 ~ 150
-55 ~ 150
375
Unit
V
V
V
A
A
A
W
℃
℃
℃/W
2006/09/10 Ver.1
Page 2
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SPN7002D
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min. Typ Max. Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Source-drain Current
Source-drain Current (pulsed)
Forward Transconductance
Diode Forward Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=60V,VGS=0V
IDSS VDS=60V,VGS=0V
TJ=125℃
VGS=10V,ID=0.50A
RDS(on) VGS= 5V,ID=0.30A
VGS= 4.5V,ID=0.05A
ISD
ISDM (2)
Gfs(1) VDS = 10 V, ID = 0.5 A
VSD(1) VGS = 0 V, IS = 0.12A
60 V
1.0 1.7 2.5
±100 nA
1
10 uA
3.5 5.0
4.0 5.5 Ω
3.7 5.5
0.35 A
1.4 A
0.6 S
0.85 1.5 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
wwwR.DeavtaeSrsheeeTt4rUa.ncsofmer Capacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDD = 30 V, ID = 1 A,
VGS = 5 V
VDS = 25 V, f = 1 MHz,
VGS = 0
VDD = 30 V, ID = 0.5 A
RG = 4.7Ω VGS = 4.5 V
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
1.4 2.0
0.8 nC
0.5
43
20 pF
6
5
15 ns
7
8
2006/09/10 Ver.1
Page 3
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| Номер в каталоге | Описание | Производители |
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