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SPN8882 PDF даташит
| Спецификация SPN8882 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN8882 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
9 Pages
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SPN8882
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8882 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. The SPN8882 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
z Power Management in Note book
z Powered System
z DC/DC Converter
z Load Switch
FEATURES
30V/40A,RDS(ON)= 10mΩ@VGS=10V
30V/40A,RDS(ON)= 14mΩ@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252,TO-251 package design
PIN CONFIGURATION
TO-252
TO-251
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PART MARKING
2007/07/20 Ver.2
Page 1
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SPN8882
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
ORDERING INFORMATION
Part Number
SPN8882T252R
SPN8882T251T
※ SPN8882T252RG : Tape Reel ; Pb – Free
※ SPN8882T251RG : Tube ; Pb – Free
Symbol
G
S
D
Package
TO-252
TO-251
Description
Gate
Source
Drain
Part Marking
SPN8882
SPN8882
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Drain-Source Voltage
Parameter
Symbol
VDSS
Gate –Source Voltage
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Continuous Drain Current
Pulsed Drain Current
TA=25℃
TA=100℃
VGSS
ID
IDM
Continuous Drain Current
Single Pulse Drain to Source Avalanche Energy − Starting
(TJ=25°C , VDD=27V , VGS=10V , IAS=28A , L=0.1mH )
Power Dissipation
TO-252-2L
TA=25℃
TO-251
IS
EAS
PD
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TJ
TSTG
RθJA
Typical
30
±20
60
40
100
50
41
40
55
150
-55/150
100
2007/07/20 Ver.2
Unit
V
V
A
A
A
mJ
W
℃
℃
℃/W
Page 2
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SPN8882
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
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Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS = 0V , ID =250uA
VGS(th) VDS = VGS,IDS =250uA
IGSS VDS = 0V,VGS = ±20 V
IDSS
RDS(on)
gfs
VDS = 24V,VGS =0V
VDS = 24V,VGS =0V,
TJ = 125C
VGS = 10V, ID = 35A
VGS = 4.5V, ID = 35A
VDS = 15V, ID =20 A
VSD IF = 40 A,VGS = 0V
30 V
0.8 2.4
±100 nA
1
100 uA
0.008 0.010
0.012 0.014
Ω
10 S
1.0 1.5 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS = 15V,VGS = 5V,
ID =50 A
VGS = 0V, VDS = 25V,
F=1MHz
(VDD = 15 V,ID = 50 A,
VGS=10V,RG = 2.5Ω)
12 20
4 nC
5
1500
320 pF
200
8 12
10 15 ns
18 30
69
2007/07/20 Ver.2
Page 3
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| Номер в каталоге | Описание | Производители |
| SPN8882 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| Номер в каталоге | Описание | Производители |
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