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SPN8878 PDF даташит
| Спецификация SPN8878 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN8878 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
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SPN8878
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8878 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. The SPN8878 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
z Power Management in Note book
z Powered System
z DC/DC Converter
z Load Switch
FEATURES
30V/20A,RDS(ON)= 12mΩ@VGS=10V
30V/15A,RDS(ON)= 17mΩ@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252 package design
PIN CONFIGURATION
TO-252
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PART MARKING
2009/04/20 Ver.1
Page 1
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SPN8878
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
Package
SPN8878T252RGB
TO-252
※ SPN8878T252RG : Tape Reel ; Pb – Free ; Halogen - Free
Part Marking
SPN8878
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
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Gate –Source Voltage
Continuous Drain Current
TA=25℃
TA=100℃
Pulsed Drain Current
Symbol
VDSS
VGSS
ID
IDM
Continuous Drain Current
Power Dissipation
TO-252-2L
TA=25℃
TO-251
IS
PD
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TJ
TSTG
RθJA
Typical
30
±20
18
13
40
5
40
55
150
-55/150
100
2009/04/20 Ver.1
Unit
V
V
A
A
A
W
℃
℃
℃/W
Page 2
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SPN8878
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
wwwR.DeavtaeSrsheeeTt4rUa.ncsofmer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=24V,VGS=0V
IDSS VDS=24V,VGS=0V
TJ=85℃
ID(on) VDS≥5V,VGS =10V
RDS(on)
VGS= 10V,ID=20A
VGS=4.5V,ID=15A
gfs VDS=15V,ID=20A
VSD IS=40A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V,VGS=10V
ID= 50A
VDS=15VGS=0V
f=1MHz
VDD=15V,RL=0.3Ω
ID≡50A,VGEN=10V
RG=1Ω
Min. Typ Max. Unit
30 V
1.0 3.0
±100 nA
1
5 uA
40 A
0.010 0.012
0.013 0.017
Ω
15 S
0.8 1.5 V
28 42
6 nC
5
1600
285 pF
140
9 15
15 25 nS
20 30
12 20
2009/04/20 Ver.1
Page 3
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| Номер в каталоге | Описание | Производители |
| SPN8878 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN8878B | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN8878BT251TGB | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN8878BT252RGB | N-Channel Enhancement Mode MOSFET | SYNC POWER |
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|
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