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SPN8822A PDF даташит
| Спецификация SPN8822A изготовлена «SYNC POWER» и имеет функцию, называемую «Dual N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN8822A |
| Описание | Dual N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
9 Pages
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SPN8822A
Common-Drain Dual N-Channel
Enhancement Mode MOSFET
DESCRIPTION
The SPN8822A is the Common-Drain Dual N-Channel
logic enhancement mode power field effect transistors are
produced using high cell density , DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These devices
are particularly suited for low voltage application ,
notebook computer power management and other battery
powered circuits where high-side switching .
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
20V/5.8A,RDS(ON)=30mΩ@VGS=4.5V
20V/5.0A,RDS(ON)=42mΩ@VGS=2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TSSOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
www.DataSheet4U.com
PART MARKING
2007/06/20 Ver.1
Page 1
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SPN8822A
Common-Drain Dual N-Channel
Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
D1 / D2
S1
S1
G1
G2
S2
S2
D1 / D2
ORDERING INFORMATION
Part Number
SPN8822ATS8RG
Package
TSSOP- 8P
SPN8822ATS8TG
TSSOP- 8P
※ SPN8822ATS8RG : 13” Tape Reel ; Pb – Free
※ SPN8822ATS8TG : Tube ; Pb – Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
wwwD.DraatianS-hSeoetu4rUc.ecoVmoltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Description
Drain
Source
Source
Gate
Gate
Source
Source
Drain
Part Marking
8822
8822
Typical
20
±12
7.2
5.4
30
2.3
1.5
0.9
-55/150
-55/150
80
Unit
V
V
A
A
A
W
℃
℃
℃/W
2007/06/20 Ver.1
Page 2
No Preview Available ! |
SPN8822A
Common-Drain Dual N-Channel
Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
wwwO.DuattpaSuhteCeta4pUa.ccoimtance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS=20V,VGS=0V
IDSS VDS=20V,VGS=0V
TJ=55℃
ID(on) VDS≥5V,VGS=4.5V
RDS(on)
gfs
VSD
VGS=4.5V,ID=5.8A
VGS=2.5V,ID=5.0A
VDS=15V,ID=5.0A
IS=1.7A,VGS=0V
20 V
0.6
±100 nA
1
10 uA
6A
0.024
0.032
30
0.8
0.030
0.042
1.2
Ω
S
V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=10V, VGS=4.5V,
ID=6.0A
VDS=8V,VGS=0V
f=1MHz
VDD=10V,RL=6Ω
ID≡1.0A,VGEN=4.5V
RG=6Ω
2
2.5 nC
2.1
575
84 pF
22
10 14
16 20 ns
35 40
3 10
2007/06/20 Ver.1
Page 3
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| Номер в каталоге | Описание | Производители |
| SPN8822 | Dual N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN8822A | Dual N-Channel Enhancement Mode MOSFET | SYNC POWER |
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