|
SPN8457 PDF даташит
| Спецификация SPN8457 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
|
|
Детали детали
| Номер произв | SPN8457 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
No Preview Available ! |
SPN8457
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8457 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z DC/DC Converter
z LCD Display inverter
FEATURES
30V/5.5A,RDS(ON)= 58mΩ@VGS=10V
30V/4.0A,RDS(ON)= 98mΩ@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-223 package design
PIN CONFIGURATION(SOT-223)
www.DataSheet4U.com
PART MARKING
2007/ 08 / 01 Ver.1
Page 1
No Preview Available ! |
SPN8457
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
ORDERING INFORMATION
Part Number
SPN8457S223RG
※ SPN8457S223RG : Tape Reel ; Pb – Free
Symbol
G
S
D
Package
SOT-223
Description
Gate
Source
Drain
Part Marking
8457
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
www.DataSheet4U.com
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25℃
TA=70℃
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
30
±20
5.8
4.2
10
1.25
2.8
1.2
150
-55/150
100
Unit
V
V
A
A
A
W
℃
℃
℃/W
2007/ 08 / 01 Ver.1
Page 2
No Preview Available ! |
SPN8457
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
wwwO.DuattpaSuhteCeta4pUa.ccoimtance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
IDSS
ID(on)
RDS(on)
gfs
VDS=30V,VGS=1.0V
VDS=30V,VGS=0.0V
TJ=55℃
VDS≧4.5V,VGS=10V
VDS≧4.5V,VGS=4.5V
VGS = 10V,ID=5.5A
VGS =4.5V,ID=4.0A
VDS=4.5V,ID=2.5A
VSD IS=1.25A,VGS=0V
30 V
1.0 3.0
±100 nA
1
10 uA
6
4
A
0.050 0.058
0.078 0.098
Ω
4.6 S
0.82 1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15VGS=10V
ID≡2.5
VDS=15VGS=0V
f=1MHz
VDD=15RL=15
ID≡1.0A,VGEN=10
RG=6Ω
4.5 10
0.8 nC
1.0
240
110 pF
17
8 20
12 30 ns
17 35
8 20
2007/ 08 / 01 Ver.1
Page 3
Скачать PDF:
[ SPN8457.PDF Даташит ]
| Номер в каталоге | Описание | Производители |
| SPN8457 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| Номер в каталоге | Описание | Производители |
| TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
 Unisonic Technologies |
| IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
 Vishay |
| LM317 | Линейный стабилизатор напряжения, 1,5 А |
 STMicroelectronics |
|
DataSheet26.com | 2020 | Контакты | Поиск |