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SPN8439 PDF даташит
| Спецификация SPN8439 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN8439 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
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SPN8439
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8439 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z DC/DC Converter
z LCD Display inverter
FEATURES
30V/6.2A,RDS(ON)= 42mΩ@VGS=4.5V
30V/5.4A,RDS(ON)= 54mΩ@VGS=2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-223 package design
PIN CONFIGURATION(SOT-223)
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PART MARKING
2007/07/30 Ver.1
Page 1
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SPN8439
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
ORDERING INFORMATION
Part Number
SPN8439S223RG
※ SPN8439S223RG : Tape Reel ; Pb – Free
Symbol
G
S
D
Package
SOT-223
Description
Gate
Source
Drain
Part Marking
8439
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
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Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25℃
TA=70℃
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
30
±12
5.8
4.2
25
1.7
2.8
1.2
150
-55/150
90
Unit
V
V
A
A
A
W
℃
℃
℃/W
2007/07/30 Ver.1
Page 2
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SPN8439
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
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Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
IDSS
ID(on)
RDS(on)
gfs
VDS=24V,VGS=1.0V
VDS=24V,VGS=0.0V
TJ=55℃
VDS≧4.5V,VGS=4.5V
VGS =4.5V,ID=6.2A
VGS =2.5V,ID=5.4A
VDS=4.5V,ID=5.4A
VSD IS=1.7A,VGS=0V
30 V
0.8 1.6
±100 nA
1
10 uA
10 A
0.034 0.042
0.040 0.054
Ω
12 S
0.8 1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15VGS=10V
ID≡6.7A
VDS=15VGS=0V
f=1MHz
VDD=15RL=15
ID≡1.0A,VGEN=10
RG=6Ω
10 18
1.6 nC
3.2
450
240 pF
38
7 15
10 20 ns
20 40
11 20
2007/07/30 Ver.1
Page 3
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| Номер в каталоге | Описание | Производители |
| SPN8439 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| Номер в каталоге | Описание | Производители |
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