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SPN9977 PDF даташит
| Спецификация SPN9977 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN9977 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
10 Pages
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SPN9977
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN9977 is the N-Channel logic enhancement mode
power field effect transistors are produced using super high
cell density , DMOS trench technology. The SPN9977 has
been designed specifically to improve the overall efficiency
of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
z Power Management in Note book
z Powered System
z DC/DC Converter
z Load Switch
FEATURES
60V/8A,RDS(ON)= 115mΩ@VGS= 10V
60V/6A,RDS(ON)= 110mΩ@VGS= 4.5V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current
capability
TO-252,TO-251 package design
PIN CONFIGURATION
TO-252
TO-251
www.DataSheet4U.com
PART MARKING
2009/04/25 Ver.1
Page 1
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SPN9977
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
Package
SPN9977T252RGB
TO-252
SPN9977T251TGB
TO-251
※ SPN9977T252RGB : Tape Reel ; Pb – Free ; Halogen - Free
※ SPN9977T251RGB : Tube ; Pb – Free ; Halogen - Free
Part Marking
SPN9977
SPN9977
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
wwwD.DraatianS-hSeoetu4rUc.ecoVmoltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
Avalanche Current
Power Dissipation
TA=25℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25℃
TA=70℃
TO-252-2L
TO-251
Symbol
VDSS
VGSS
ID
IDM
IAS
PD
TJ
TSTG
RθJA
Typical
60
±20
14
9.0
45
14
40
55
150
-55/150
100
2009/04/25 Ver.1
Unit
V
V
A
A
A
W
℃
℃
℃/W
Page 2
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SPN9977
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
wwwR.DeavtaeSrsheeeTt4rUa.ncsofmer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=60V,VGS=0V
IDSS VDS=60V,VGS=0V
TJ=85℃
ID(on) VDS≥5V,VGS =10V
RDS(on)
VGS= 10V,ID=8A
VGS=4.5V,ID=6A
gfs VDS=15V,ID=4.3A
VSD IS=1.7A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=30V,VGS=10V
ID= 4.3A
VDS=15,VGS=0V
f=1MHz
VDD=30V,RL=8.8Ω
ID≡3.4A,VGEN=10V
RG=1Ω
Min. Typ Max. Unit
60 V
0.5 1.5
±100 nA
1
5 uA
14 A
0.110
0.105
15
0.115
0.110
Ω
S
0.8 1.2 V
15 20
2.5 nC
2.6
675
80 pF
40
10 20
15 25 nS
25 35
12 20
2009/04/25 Ver.1
Page 3
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| Номер в каталоге | Описание | Производители |
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