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SPN9926A PDF даташит
| Спецификация SPN9926A изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN9926A |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
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SPN9926A
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN9926A is the Dual N-Channel logic
enhancement mode power field effect transistors are
produced using high cell density , DMOS trench
technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
20V/6.0A,RDS(ON)=30mΩ@VGS=4.5V
20V/5.0A,RDS(ON)=42mΩ@VGS=2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
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PART MARKING
2007/ 06 / 20 Ver.1
Page 1
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SPN9926A
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
ORDERING INFORMATION
Part Number
SPN9926AS8RG
SPN9926AS8TG
※ SPN9926AS8RG : 13” Tape Reel ; Pb – Free
※ SPN9926AS8TG : Tube ; Pb – Free
Package
SOP- 8P
SOP- 8P
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
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Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
Part Marking
SPN9926A
SPN9926A
Typical
20
±12
5.0
3.4
30
1.6
2.8
1.8
-55/150
-55/150
105
Unit
V
V
A
A
A
W
℃
℃
℃/W
2007/ 06 / 20 Ver.1
Page 2
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SPN9926A
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
wwwR.DeavtaeSrsheeeTt4rUa.ncsofmer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS=20V,VGS=0V
IDSS VDS=20V,VGS=0V
TJ=55℃
ID(on) VDS≦5V,VGS=4.5V
RDS(on)
VGS=4.5V,ID=6.0A
VGS=2.5V,ID=5.0A
gfs VDS=5V,ID=-3.6A
VSD IS=1.7A,VGS=0V
20 V
0.6
±100 nA
1
5 uA
6A
0.024
0.032
10
0.030
0.042
Ω
S
0.8 1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=10V, VGS=4.5V,
ID=6.0A
VDS=8V,VGS=0V
f=1MHz
VDD=10V,RL=6Ω
ID≡1.0A,VGEN=4.5V
RG=6Ω
2
2.5 nC
2.1
575
84 pF
22
10 14
16 20 ns
35 40
3 10
2007/ 06 / 20 Ver.1
Page 3
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