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SPN9507 PDF даташит
| Спецификация SPN9507 изготовлена «SYNC POWER» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPN9507 |
| Описание | N-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
9 Pages
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SPN9507
N-Channel Enhancement Mode MOSFET
28DESCRIPTION
The SPN9507 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
75V/60A,RDS(ON)= 5.0mΩ@VGS= 10V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-220-3L package design
APPLICATIONS
z DC/DC Converter
z Load Switch
z SMPS Secondary Side Synchronous Rectifier
PIN CONFIGURATION( TO-220-3L )
www.DataSheet4U.com
PART MARKING
2009/06/20 Ver.1
Page 1
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SPN9507
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
ORDERING INFORMATION
Part Number
SPN9507T220TGB
Package
TO-220-3L
※ SPN9507T220TGB: Tube ; Pb – Free; Halogen – Free
Part Marking
SPN9507
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
wwwC.DoantatSinhueoetu4sU.Dcormain Current(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Power Dissipation
TA=25℃
TA=70℃
Avalanche Energy with Single Pulse
( Tj=25℃, L = 0.12mH , IAS = 80A , VDD = 60V. )
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ
TSTG
RθJA
Typical
75
±20
80
70
240
300
3.38
380
-55/150
-55/150
2
Unit
V
V
A
A
W
mJ
℃
℃
℃/W
2009/06/20 Ver.1
Page 2
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SPN9507
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
wwwT.Duartna-SOhenetT4Uim.ceom
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th)
IGSS
IDSS
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=75V,VGS=0V
VDS=60V,VGS=0V
TJ = 150 °C
RDS(on) VGS= 10V,ID=60A
gfs VDS=10V,ID=60A
VSD IS=60A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=40V,VGS=10V
ID= 80A
VDS=25V,VGS=0V
f=1MHz
VDD=40V,RL=0.5Ω
ID≡80A,VGEN=10V
RG=3.3Ω
Min. Typ Max. Unit
75 V
2.0 4.0
±100 nA
10
250 uA
5.0 mΩ
57 S
1.3 V
85
25
36
4290
985
390
22
160
38
165
135
6870
nC
pF
nS
2009/06/20 Ver.1
Page 3
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| Номер в каталоге | Описание | Производители |
| SPN9507 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| Номер в каталоге | Описание | Производители |
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|
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