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SPP102 PDF даташит
| Спецификация SPP102 изготовлена «SYNC POWER» и имеет функцию, называемую «Dual P-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPP102 |
| Описание | Dual P-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
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SPP1023
Dual P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP1023 is the Dual P-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
P-Channel
-20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V
-20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V
-20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-563 (SC-89-6L) package design
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PIN CONFIGURATION( SOT-563 / SC-89-6L)
PART MARKING
2007/10/31 Ver.1
Page 1
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SPP1023
Dual P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
Symbol
S1
G1
D2
S2
G2
D1
Description
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain1
ORDERING INFORMATION
Part Number
SPP1023S56RG
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPP1023S56RG : Tape Reel ; Pb – Free
Package
SOT-563
Part Marking
A
ABSOULTE MAXIMUM RATINGS
www(.TDAat=a2S5he℃et4UU.ncolemss otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=80℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
2007/10/31 Ver.1
Typical
-20
±12
-0.45
-0.35
-1.0
-0.3
0.35
0.19
-55/150
-55/150
Unit
V
V
A
A
A
W
℃
℃
Page 2
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SPP1023
Dual P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
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Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
IDSS VDS=-20V,VGS=0V
TJ=55℃
ID(on) VDS≤ -4.5V,VGS =-5V
RDS(on)
gfs
VGS=-4.5V,ID=-0.45A
VGS=-2.5V,ID=-0.35A
VGS=-1.8V,ID=-0.25A
VDS=-10V,ID=-0.25A
VSD IS=-0.15A,VGS=0V
-20
-0.35
-0.8
±100
-1
-5
V
nA
uA
-0.7 A
0.42 0.52
0.58 0.70 Ω
0.75 0.95
0.4 S
-0.8 -1.2 V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=-10V,VGS=-4.5V ,ID
≡-0.6A
VDD=-10V,RL=10Ω ,
ID≡-0.4A
VGEN=-4.5V ,RG=6Ω
1.5 2.0
0.3 nC
0.35
5 10
15 25 ns
8 15
1.4 1.8
2007/10/31 Ver.1
Page 3
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