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SPP2319 PDF даташит
| Спецификация SPP2319 изготовлена «SYNC POWER» и имеет функцию, называемую «P-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPP2319 |
| Описание | P-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
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SPP2319
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP2319 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
-40V/-3.0A,RDS(ON)= 96mΩ@VGS=- 10V
-40V/-2.8A,RDS(ON)=110mΩ@VGS=-4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
PIN CONFIGURATION ( SOT-23-3L )
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PART MARKING
2009/07/15 Ver.1
Page 1
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SPP2319
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
SPP2319S23RGB
Package
SOT-23-3L
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPP2319S23RGB : Tape Reel ; Pb – Free ; Halogen – Free
Part Marking
19YW
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
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Drain-Source Voltage
Parameter
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
2009/07/15 Ver.1
Typical
-40
±20
-3.5
-2.8
-20
-1.4
1.25
0..81
-55/150
-55/150
105
Unit
V
V
A
A
A
W
℃
℃
℃/W
Page 2
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SPP2319
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
wwwR.DeavtaeSrsheeeTt4rUa.ncsofmer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±20V
VDS=-36V,VGS=0V
IDSS VDS=-36V,VGS=0V
TJ=85℃
ID(on) VDS= -5V,VGS =-4.5V
RDS(on)
VGS=-10V,ID=-3.0A
VGS=-4.5V,ID=-2.8A
gfs VDS=-15V,ID=-3.0A
VSD IS=-1.3A,VGS =0V
-40 V
-0.8 -2.5
±100 nA
-1
-5 uA
-10 A
0.090
0.100
13
0.096
0.110
Ω
S
-0.55 -1.0 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-10V
ID= -3.0A
VDS=-15V,VGS=0V
f=1MHz
VDD=-15V,RL=15Ω
ID≡-1.0A,VGEN=-10V
RG=6Ω
9 12
1.5 nC
2.0
500
95 pF
50
8 20
10 20 nS
30 35
15 20
2009/07/15 Ver.1
Page 3
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