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SPP2303 PDF даташит
| Спецификация SPP2303 изготовлена «SYNC POWER» и имеет функцию, называемую «P-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPP2303 |
| Описание | P-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
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SPP2303
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP2303 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
-30V/-2.6A,RDS(ON)=130mΩ@VGS=- 10V
-30V/-2.0A,RDS(ON)=180mΩ@VGS=-4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
PIN CONFIGURATION(SOT-23-3L)
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PART MARKING
2007/02/20 Ver.5
Page 1
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SPP2303
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
ORDERING INFORMATION
Part Number
SPP2303S23RG
Package
SOT-23-3L
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPP2303S23RG : Tape Reel ; Pb – Free
Description
Gate
Source
Drain
Part Marking
03YW
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
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Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-30
±20
-3.0
-2.0
-10
-1.25
1.25
0.8
150
-55/150
100
Unit
V
V
A
A
A
W
℃
℃
℃/W
2007/02/20 Ver.5
Page 2
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SPP2303
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
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Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-10uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±20V
VDS=-30V,VGS=0V
IDSS VDS=-30V,VGS=0V
TJ=55℃
ID(on) VDS≦-5V,VGS=-10V
RDS(on)
gfs
VSD
VGS=- 10V,ID=-2.6A
VGS=-4.5V,ID=-2.0A
VDS=-10V,ID=-1.7A
IS=-1.25A,VGS=0V
-30 V
-1.0 -3.0
±100 nA
-1
-10 uA
-6 A
0.095
0.125
2.4
-0.8
0.130
0.180
-1.2
Ω
S
V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-10V
ID≡-1.7A
VDS=-15V,VGS=0V
f=1MHz
VDD=-15V,RL=15Ω
ID≡-1.0A,VGEN=-10V
RG=6Ω
5.8 10
0.8 nC
1.5
226
87 pF
19
9 20
9 20 ns
18 35
6 20
2007/02/20 Ver.5
Page 3
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| Номер в каталоге | Описание | Производители |
| SPP2301 | P-Channel Enhancement Mode MOSFET |  ETC |
| SPP2301A | P-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPP2301D | P-Channel Enhancement Mode MOSFET | SYNC POWER |
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