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SPP3407 PDF даташит

Спецификация SPP3407 изготовлена ​​​​«SYNC POWER» и имеет функцию, называемую «P-Channel Enhancement Mode MOSFET».

Детали детали

Номер произв SPP3407
Описание P-Channel Enhancement Mode MOSFET
Производители SYNC POWER
логотип SYNC POWER логотип 

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SPP3407 Даташит, Описание, Даташиты
SPP3407
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP3407 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ -30V/-4.0A,RDS(ON)= 60m@VGS=- 10V
‹ -30V/-3.2A,RDS(ON)= 80m@VGS=-4.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-23-3L package design
PIN CONFIGURATION(SOT-23-3L)
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PART MARKING
2006/09/20 Ver.1
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SPP3407 Даташит, Описание, Даташиты
SPP3407
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
ORDERING INFORMATION
Part Number
SPP3407S23RG
Package
SOT-23-3L
Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
SPP3407S23RG : Tape Reel ; Pb – Free
Description
Gate
Source
Drain
Part Marking
A7YW
ABSOULTE MAXIMUM RATINGS
(TA=25Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150)
wwwP.DualtsaeSdheDert4aUin.coCmurrent
TA=25
TA=70
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-30
±20
-3.6
-3.0
-15
-1.0
1.25
0.8
150
-55/150
120
Unit
V
V
A
A
A
W
/W
2006/09/20 Ver.1
Page 2









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SPP3407 Даташит, Описание, Даташиты
SPP3407
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
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Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±20V
VDS=-24V,VGS=0V
IDSS VDS=-24V,VGS=0V
TJ=55
ID(on) VDS-5V,VGS=-10V
RDS(on)
gfs
VSD
VGS=- 10V,ID=-4.0A
VGS=-4.5V,ID=-3.2A
VDS=-5.0V,ID=-4.0A
IS=-1.0A,VGS=0V
-30 V
-1.0 -3.0
±100 nA
-1
-10 uA
-10 A
0.045
0.060
10
-0.8
0.060
0.080
-1.2
S
V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-10V
ID-4.0A
VDS=-15V,VGS=0V
f=1MHz
VDD=-15V,RL=15
ID-1.0A,VGEN=-10V
RG=6
14 21
1.9 nC
3.7
540
131 pF
105
10 15
15 25 ns
31 50
20 30
2006/09/20 Ver.1
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